Matthew Morea
Stanford University
13 Papers
33 Citations
Matthew Morea is an academic researcher from Stanford University. The author has contributed to research in topics: Single-photon avalanche diode & Jitter. The author has an hindex of 6, co-authored 13 publications.
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Papers
Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors
Matthew Morea,Corinna E. Brendel,Kai Zang,Junkyo Suh,Colleen S. Fenrich,Yi-Chiau Huang,Hua Chung,Yijie Huo,Theodore I. Kamins,Krishna C. Saraswat,James S. Harris +10 more
TL;DR: In this paper, the effect of surface passivation on pseudomorphic multiple-quantum-well photodetectors was studied and the activation energy of the photodeter was calculated.
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Germanium Quantum Well QCSE Waveguide Modulator With Tapered Coupling in Distributed Modulator–Detector System
Kai Zang,Ching-Ying Lu,Xiaochi Chen,Edward T. Fei,Muyu Xue,Stephanie A. Claussen,Matthew Morea,Yusi Chen,Raj Dutt,Yijie Huo,Theodore I. Kamins,James S. Harris +11 more
TL;DR: In this article, a thin buffer layer Ge QW QCSE waveguide modulator evanescently couples to and from an Si waveguide through an adiabatic three-dimensional (3D) taper.
13
High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping
Zhenyang Xia,Kai Zang,Dong Liu,Ming Zhou,Tong-June Kim,Huilong Zhang,Muyu Xue,Jeongpil Park,Matthew Morea,Jae Ha Ryu,Tzu-Hsuan Chang,Jisoo Kim,Shaoqin Gong,Theodore I. Kamins,Zongfu Yu,Zhehui Wang,James S. Harris,Zhenqiang Ma +17 more
TL;DR: In this paper, an optimized gradient boron doping technique was used to enhance the photo-generated carrier collection efficiency and photo responsivity under the UV wavelength region, and the ultrathin p+-i-n junction showed an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad).
13
Surface textured silicon single-photon avalanche diode
Kai Zang,Xun Ding,Xiao Jiang,Yijie Huo,Matthew Morea,Xiaochi Chen,Ching-Ying Lu,Muyu Xue,Yusi Chen,Colleen Shang,Theodore I. Kamins,Qiang Zhang,Jian-Wei Pan,James S. Harris +13 more
- 14 May 2017
TL;DR: In this paper, a surface textured Si SPAD with improved detection efficiency and without sacrificing dark count rate or jitter distribution is presented, which reduces reflection, allows weak light trapping and is CMOS and lithography compatible.
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Pile-up correction in characterizing single-photon avalanche diodes of high dark count rate
Xun Ding,Kai Zang,Yueyang Fei,Tianzhe Zheng,Tao Su,Matthew Morea,Ge Jin,James S. Harris,Xiao Jiang,Qiang Zhang +9 more
TL;DR: In this article, a pile-up correction method for the precise characterization of photon detection efficiency and timing jitter in immature SPADs with an unintentionally high dark count rate was proposed.
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