Matthew Lamberti
University at Albany, SUNY
12 Papers
41 Citations
Matthew Lamberti is an academic researcher from University at Albany, SUNY. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 5, co-authored 12 publications. Previous affiliations of Matthew Lamberti include State University of New York System.
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Papers
Room-temperature defect tolerance of band-engineered InAs quantum dot heterostructures
TL;DR: In this paper, the defect-related quenching is mainly controlled by a reduction in the density of defect-free InAs quantum dots (QDs) embedded into GaAs quantum wells (QWs).
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Hybrid integration of III-V optoelectronic devices on Si platform using BCB
Alex Katsnelson,Vadim Tokranov,Michael Yakimov,Matthew Lamberti,Serge Oktyabrsky +4 more
- 02 Jun 2003
TL;DR: In this article, a novel protocol for fabrication of III-V optoelectronic components such as LEDs, VCSELs and photodetectors on Si platform is proposed.
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Structural and Optical Effects of Capping Layer Material and Growth Rate on the Properties of Self-Assembled InAs Quantum Dot Structures
Gabriel Agnello,Vadim Tokranov,Michael Yakimov,Matthew Lamberti,Yuegui Zheng,Serge Oktyabrsky +5 more
TL;DR: In this paper, the effects of capping layer growth on the physical/chemical properties as well as the optical/electronic performance of QD device structures were investigated using atomic force microscopy (AFM), photoluminescence (PL) and TEM methods.
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Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties
Vadim Tokranov,Michael Yakimov,Alex Katsnelson,Matthew Lamberti,Serge Oktyabrsky +4 more
- 01 Jul 2003
TL;DR: In this paper, the influence of overgrowth procedure and a few monolayer-thick AlAs capping layers on the properties of self-assembled InAs quantum dots (QDs) using transmission electron microscopy (TEM), scanning electron microscope, and photoluminescence (PL).
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Hybrid Integration of III-V Optoelectronic Devices on Si Platform Using BCB
TL;DR: In this paper, the authors proposed a novel protocol for fabrication of III-V optoelectronic components on a Si platform, where reversed vertical cavity surface emitting laser (VCSEL) structures were grown homoepitaxialy by MBE on a GaAs substrate, and then bonded to a Si wafer using a benzocyclobutene (BCB) polymer.
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