Mathieu Gallart
University of Strasbourg
81 Papers
800 Citations
Mathieu Gallart is an academic researcher from University of Strasbourg. The author has contributed to research in topics: Quantum well & Exciton. The author has an hindex of 20, co-authored 78 publications. Previous affiliations of Mathieu Gallart include Centre national de la recherche scientifique & University of Montpellier.
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Papers
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
Pierre Lefebvre,A Morel,Mathieu Gallart,Thierry Taliercio,Jacques Allègre,Bernard Gil,Henry Mathieu,Benjamin Damilano,Nicolas Grandjean,Jean Massies +9 more
TL;DR: In this paper, a graded-width InGaN/GaN quantum well was used to study a time-resolved photoluminescence (PL) at T = 8 K, where the well width continuously varies from ∼5.5 to 2.0 nm.
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Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering.
Julien Petersen,Christelle Brimont,Mathieu Gallart,Guy Schmerber,Pierre Gilliot,Corinne Ulhaq-Bouillet,Jean-Luc Rehspringer,Silviu Colis,Claude Becker,A. Slaoui,Aziz Dinia +10 more
TL;DR: The photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu(3+) ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films.
Photoluminescence properties of rare earth (Nd, Yb, Sm, Pr)-doped CeO2 pellets prepared by solid-state reaction
Matteo Balestrieri,Silviu Colis,Mathieu Gallart,Guy Schmerber,Marc Ziegler,Pierre Gilliot,Aziz Dinia +6 more
TL;DR: In this paper, the trivalent rare earth ions are inserted into the elementary oxide powders to give rise to photon management properties, and the information obtained from the absorbance spectra with that of the PL excitation spectra are combined to provide insight in the electronic level structure and transfer mechanism.
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Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process
Julien Petersen,Christelle Brimont,Mathieu Gallart,Olivier Crégut,Guy Schmerber,Pierre Gilliot,B. Hönerlage,Corinne Ulhaq-Bouillet,Jean-Luc Rehspringer,Cédric Leuvrey,Silviu Colis,H. Aubriet,Christiane Becker,David Ruch,Abdelilah Slaoui,Aziz Dinia +15 more
TL;DR: In this paper, the structural and optical properties of ZnO thin films fabricated by sol-gel process and spin coated onto Si (100) and quartz substrates were studied by photoluminescence (PL) and absorption spectroscopy at low and room temperatures.
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Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
Pierre Lefebvre,Thierry Taliercio,A Morel,Jacques Allègre,Mathieu Gallart,Bernard Gil,Henry Mathieu,Benjamin Damilano,Nicolas Grandjean,Jean Massies +9 more
TL;DR: In this paper, the influence of growing or not an AlGaN barrier on top of the active layer was investigated, and the results were consistent with carrier localization on potential fluctuations with spatial extension much smaller than the size of the quantum boxes.
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