In this work, we reported a sensitive, label-free electrochemical biosensor based on the intrinsic topological insulator (TI) BiSbTeSe2 for potential application in the determination of the HIV gene. With strong spin-obit coupling, TIs could have robust surface states with low electronic noise, which might be beneficial for the stable and sensitive electron transport between the electrode and electrolyte interface. Under optimized conditions of the biosensors using BiSbTeSe2, the differential pulse voltammetry (DPV) peak currents showed a linear relationship with the logarithm of target DNA concentrations ranging from 1.0 × 10-13 to 1.0 × 10-7 M, with a detection limit of 1.07 × 10-15 M. The sensing assay also displayed good selectivity and stability after storage at 4 °C for 7 days. This work provides an effective way to develop biosensors with topological materials, which have a potential application in the clinical determination and monitoring field.

Electrochemical DNA Biosensors Based on the Intrinsic Topological Insulator BiSbTeSe2 for Potential Application in HIV Determination.

Sensitive biosensors based on topological insulator Bi2Se3 and peptide.

Quantum well states (QWSs) with sizable Rashba splitting are a promising quantum phase to achieve spin-split current for quantum computing and spintronics due to their controllable band structures. However, most QWSs were achieved upon metallic substrates with strong bulk electron transport. Developing semiconductor-based QWSs is preferable to minimize substrate interference. Here we report a Pb induced surface reconstruction on Bi/Si(111) α phase. Combining scanning tunneling microscopy (STM) and density functional theory (DFT) the atomic structure has been determined. QWSs and a sizable Rashba band splitting are predicted, with the latter comparable to what is found in other semiconductor heterostructures and an order of magnitude higher than that in Pb/Si(111) QWSs.

Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction.

SnTe materials are one of the most flexible material platforms for exploring the interplay of topology and different types of symmetry breaking. We study symmetry-protected topological states in SnTe nanowires in the presence of various combinations of Zeeman field, s-wave superconductivity and inversion-symmetry-breaking field. We uncover the origin of robust corner states and hinge states in the normal state. In the presence of superconductivity, we find inversion-symmetry-protected gapless bulk Majorana modes, which give rise to quantized thermal conductance in ballistic wires. By introducing an inversion-symmetry-breaking field, the bulk Majorana modes become gapped and topologically protected localized Majorana zero modes appear at the ends of the wire.

Corner states, hinge states and Majorana modes in SnTe nanowires

/pdf/spin-polarization-of-topological-crystalline-and-normal-1kw9ijl1.pdf

Spin-polarization of topological crystalline and normal insulator Pb<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e463" altimg="si25.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Sn<mml:ma

Structure inversion asymmetry is an inherent feature of quantum confined heterostructures with non-equivalent interfaces It leads to a spin splitting of the electron states and strongly affects the electronic band structure The effect is particularly large in topological insulators because the topological surface states are extremely sensitive to the interfaces Here, the first experimental observation and theoretical explication of this effect are reported for topological crystalline insulator quantum wells made of Pb1-xSnxSe confined by Pb1-yEuySe barriers on one side and by vacuum on the other This provides a well defined structure asymmetry controlled by the surface condition The electronic structure is mapped out by angle-resolved photoemission spectroscopy and tight binding calculations, evidencing that the spin splitting decisively depends on hybridization and, thus, quantum well width Most importantly, the topological boundary states are not only split in energy but also separated in space-unlike conventional Rashba bands that are splitted only in momentum The splitting can be strongly enhanced to very large values by control of the surface termination due to the charge imbalance at the polar quantum well surface The findings thus, open up a wide parameter space for tuning of such systems for device applications

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202008885

Structure Inversion Asymmetry and Rashba Effect in Quantum Confined Topological Crystalline Insulator Heterostructures

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Structure Inversion Asymmetry and Rashba Effect in Quantum Confined Topological Crystalline Insulator Heterostructures