Lateral epitaxial overgrowth (LEO) of ZnO has been demonstrated in water at 90 °C. The process starts with hydrothermal epitaxial growth of ZnO(0001) on MgAl2O4(111), followed by channel stamping of photoresist to define “growth windows”. LEO films grow in zinc-precursor solutions at pH 10.9; sodium citrate addition controls out-of-plane growth. Transmission electron microscopy indicates threading dislocation reductions from ∼ 2 × 1010 to < 2 × 108 cm–2 from the window to the wing regions. Microphotoluminescence and Hall-effect measurements indicate improved material quality. Wing tilt was observed. Double LEO demonstrates the possibility of complete dislocation reduction.

Lateral Epitaxial Overgrowth of ZnO in Water at 90 °C†

Optical properties of Zn-terminated ZnO bulk

We present photoluminescence (PL) studies of GaN and ZnO nanocrystallites and powders. Our studies show that in addition to the intrinsic photoluminescence characteristics, the photoluminescence properties of the porous media are also a strong function of conditions such as ensemble size and powder density, ultraviolet-laser excitation power, and vacuum state. PL redshifts up to 120 meV were observed for GaN and ZnO crystallites and were attributed to laser heating and heat trapping in the ensemble. The electron-phonon interaction model for GaN indicated ensemble temperature ∼550 K, which is consistent with the finding obtained via high-temperature PL and Raman experiments. The PL in the vacuum state exhibited a significant redshift, ∼80 meV relative to that in air, and the PL of a dense ZnO pellet was found to resemble that of the bulk more than does a loose powder. The PL analyses indicated an excitonic emission at room temperature for both GaN and ZnO crystallites with intensity saturation occurring fo...

Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders

Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy

Crystal chemistry of epitaxial ZnO on (111) MgAl2O4 produced by hydrothermal synthesis

Plasma-assisted molecular-beam epitaxy of ZnO epilayers on MgAl2O4(111) substrates is described. Acid mixed by H2SO4 and H3PO4 was used for the substrate etching, which provides atomically flat surfaces with a regular terrace array. The influence of the substrate on lateral growth and coalescence of ZnO islands during epitaxy is discussed with corresponding morphological and structural properties. The epitaxial relationship between the ZnO epilayer and MgAl2O4 substrate is determined as: ZnO[0110]∥MgAl2O4[112] and ZnO[2110]∥MgAl2O4[110]. X-ray diffraction, photoluminescence, and Hall-effect measurements are reported, which indicate that high-quality ZnO epilayers are obtained by using atomically flat MgAl2O4(111) substrates to suppress columnar growth.

Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates

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Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates