Martin Stutzmann
Technische Universität München
789 Papers
8.4K Citations
Martin Stutzmann is an academic researcher from Technische Universität München. The author has contributed to research in topics: Silicon & Diamond. The author has an hindex of 84, co-authored 781 publications. Previous affiliations of Martin Stutzmann include Ludwig Maximilian University of Munich & Infineon Technologies.
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Papers
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
1.6K
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
Oliver Ambacher,Jacek A. Majewski,C. R. Miskys,A. Link,M. Hermann,Martin Eickhoff,Martin Stutzmann,Fabio Bernardini,Vincenzo Fiorentini,V. Tilak,B Schaff,L.F. Eastman +11 more
TL;DR: In this paper, it was shown that the macroscopic nonlinear pyroelectric polarization of wurtzite AlInN/GaN, InxGa1-xN and AlxIn1xN ternary compounds (large spontaneous polarization and piezoelectric coupling) dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GAN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heter
1.1K
The origin of visible luminescencefrom “porous silicon”: A new interpretation
TL;DR: In this paper, the authors compared the luminescence and vibrational properties of anodically oxidized (porous) silicon and of chemically synthesized siloxene (Si 6 O 3 H 6 ) and its derivates.
842
Optical constants of epitaxial AlGaN films and their temperature dependence
D. Brunner,H. Angerer,E. Bustarret,F. Freudenberg,R. Höpler,Roman Dimitrov,Oliver Ambacher,Martin Stutzmann +7 more
TL;DR: In this paper, the authors studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1−xN films on temperature and composition using transmission and photothermal deflection spectroscopy.
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