Martin Kuball
University of Bristol
437 Papers
2.6K Citations
Martin Kuball is an academic researcher from University of Bristol. The author has contributed to research in topics: Raman spectroscopy & Diamond. The author has an hindex of 50, co-authored 427 publications. Previous affiliations of Martin Kuball include Max Planck Society & Durham University.
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Papers
Evidence for phonon-plasmon interaction in InN by Raman spectroscopy
TL;DR: In this paper, the authors investigated the interaction between carriers and polar phonons using Raman spectroscopy and found that the phonon-plasmon interaction is related to surface conduction carriers.
27
Room-temperature direct bonding of diamond and Al
TL;DR: In this article, the interfacial structures of the diamond/Al bonding interface with annealing at different temperatures were investigated under in-situ annesaling in a transmission electron microscope (TEM).
27
Hydrogen‐induced modification of the optical properties of the GaAs(100) surface
Norbert Esser,Paulo V. Santos,Martin Kuball,Manuel Cardona,M. Arens,D. Pahlke,W. Richter,F. Stietz,Juergen A. Schaefer,Bjørn-Ove Fimland +9 more
TL;DR: In this article, the influence of hydrogen adsorption on the surface order, dielectric function, and surface anisotropy was investigated for the three main reconstructions of the GaAs(100) surface.
27
(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective
Peter Moens,Abhishek Banerjee,A. Constant,Peter Coppens,Markus Caesar,Zilan Li,Steven Vandeweghe,Frederick Declercq,Balaji Padmanabhan,Woochul Jeon,Jia Guo,Ali Salih,Marnix Tack,Matteo Meneghini,Stefano Dalcanale,A Tajilli,Gaudenzio Meneghesso,Enrico Zanoni,Michael J. Uren,Indranil Chatterjee,Serge Karboyan,Martin Kuball +21 more
- 19 May 2016
TL;DR: In this article, the most important intrinsic reliability mechanisms for GaN power devices are discussed, including gate dielectric reliability, Ohmic contact reliability, accelerated drain stress testing (high temperature reverse bias--HTRB) and high voltage device wear-out testing (High voltage off-state stress--HVOS).