Martín Jaraíz
University of Valladolid
117 Papers
1.1K Citations
Martín Jaraíz is an academic researcher from University of Valladolid. The author has contributed to research in topics: Kinetic Monte Carlo & Ion implantation. The author has an hindex of 23, co-authored 111 publications. Previous affiliations of Martín Jaraíz include Philips & Alcatel-Lucent.
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Papers
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
Peter Stolk,H.-J. Gossmann,D. J. Eaglesham,Dale Conrad Jacobson,Conor S. Rafferty,G. H. Gilmer,Martín Jaraíz,J. M. Poate,H. S. Luftman,T. E. Haynes +9 more
TL;DR: In this paper, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE) to study the mechanisms of TED.
Energetics of self-interstitial clusters in si
N.E.B. Cowern,Giovanni Mannino,Peter Stolk,Fred Roozeboom,H.G.A. Huizing,J. G. M. van Berkum,Fuccio Cristiano,Alain Claverie,Martín Jaraíz +8 more
TL;DR: In this paper, the authors used the transient supersaturation in a system undergoing Ostwald ripening is related to the cluster formation energy as a function of cluster size, and used this relation to study the energetics of self-interstitial clusters in Si.
B diffusion and clustering in ion implanted Si: The role of B cluster precursors
Lourdes Pelaz,Martín Jaraíz,George H. Gilmer,H.-J. Gossmann,Conor S. Rafferty,D. J. Eaglesham,J. M. Poate +6 more
TL;DR: In this paper, a model for B implantation, diffusion and clustering is presented, which successfully explains and predicts the behavior of B under a wide variety of implantation and annealing conditions by invoking the formation of immobile precursors of B clusters, prior to the onset of transient enhanced diffusion.
218
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
TL;DR: In this article, a new atomistic approach to Si device process simulation is presented based on a Monte Carlo diffusion code coupled to a binary collision program, which includes recombination of vacancies and interstitials.
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
TL;DR: In this article, a comprehensive model of the nucleation, growth, and dissolution of B clusters in implanted Si is presented, based on detailed interactions between B and defects in Si.
165