Martin Holzbauer
Vienna University of Technology
13 Papers
32 Citations
Martin Holzbauer is an academic researcher from Vienna University of Technology. The author has contributed to research in topics: Cascade & Metamaterial. The author has an hindex of 5, co-authored 13 publications.
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Papers
Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures.
Masiar Sistani,Philipp Staudinger,Johannes Greil,Martin Holzbauer,Hermann Detz,Emmerich Bertagnolli,Alois Lugstein +6 more
TL;DR: The first experimental observation of room temperature quantum ballistic transport in Ge is demonstrated, favorable for integration in complementary metal–oxide–semiconductor platform technology.
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Remote Sensing with Commutable Monolithic Laser and Detector
Rolf Szedlak,Andreas Harrer,Martin Holzbauer,Benedikt Schwarz,Johannes P. Waclawek,Donald MacFarland,Tobias Zederbauer,Hermann Detz,Aaron Maxwell Andrews,Werner Schrenk,Bernhard Lendl,Gottfried Strasser +11 more
TL;DR: A compact sensor providing room-temperature operation of monolithic surface-active lasers and detectors integrated on the same chip is presented, which enables a crucial miniaturization of sensing devices.
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The influence of whispering gallery modes on the far field of ring lasers.
Rolf Szedlak,Martin Holzbauer,Donald MacFarland,Tobias Zederbauer,Hermann Detz,Aaron Maxwell Andrews,Clemens Schwarzer,Werner Schrenk,Gottfried Strasser +8 more
TL;DR: In this article, a ring laser with continuous π-phase shifts in the second order distributed feedback grating was introduced, which facilitates insights into the nature of the modal outcoupling in an optical cavity.
Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN
Christian Koller,Gregor Pobegen,Clemens Ostermaier,Gebhard Hecke,Richard Neumann,Martin Holzbauer,Gottfried Strasser,Dionyz Pogany +7 more
Abstract: A breakdown phenomenon is studied in thin carbon doped GaN layers (GaN:C; carbon concentration 1019 cm−3) embedded between a top metal electrode and bottom n‐doped GaN (n‐GaN). When slowly sweeping positive bias V at the top electrode up and down, a hysteresis is found with transitions to on‐ and off‐states at voltages Vbd,up and Vbd,down (
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Ring quantum cascade lasers with grating phase shifts and a light collimating dielectric metamaterial for enhanced infrared spectroscopy
Rolf Szedlak,Martin Holzbauer,Peter Reininger,Donald MacFarland,Tobias Zederbauer,Hermann Detz,Aaron Maxwell Andrews,Werner Schrenk,Gottfried Strasser +8 more
TL;DR: In this paper, the distributed feedback grating exhibits two Ϭ-phase shifts and a gradient index metamaterial is fabricated into the substrate, which provides far fields with a central intensity maximum.
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