Martin Henzler
Leibniz University of Hanover
151 Papers
2.3K Citations
Martin Henzler is an academic researcher from Leibniz University of Hanover. The author has contributed to research in topics: Low-energy electron diffraction & Electron diffraction. The author has an hindex of 38, co-authored 149 publications. Previous affiliations of Martin Henzler include University of Wisconsin-Madison & Free University of Berlin.
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Papers
Order and disorder in ultrathin Pb films grown on Si(1 1 1) 7×7 substrates at low temperatures
TL;DR: In this paper, the first three monolayers are heavily disordered, so that no LEED pattern is observed in the full energy range of LEED, but oscillations of the LEED intensities are observed for coverages θ > 4 ML.
Spatial pattern formation in a catalytic surface reaction: The facetting of Pt(110) in CO+O2.
TL;DR: In this article, the authors consider the case of a non-equilibrium structure which is only periodic in space and show that the same kinetic instabilities which lead to a periodic variation of the system variables in time may also induce a periodic variations in space.
Switching between one and two dimensions: conductivity of Pb-induced chain structures on Si(557).
TL;DR: It is shown in a combined study of four-point conductance measurement and tunneling microscopy that surface state conductance induced by one monolayer of Pb on Si(557) can be quasi one dimensional with conductivity values close to typical three-dimensional metals.
Adsorption of atomic hydrogen on clean cleaved silicon (111)
G. Schulze,Martin Henzler +1 more
TL;DR: In this paper, the combination of different experimental methods showed that the hydrogen affects more than just saturation of dangling bonds and showed that at low coverage the desorption kinetics of state β1 is of second order with activation energy Ed= 2.5eV± 0.1eV.
High resolution measurement of the step distribution at the Si/SiO2 interface
Martin Henzler,P. Marienhoff +1 more
TL;DR: In this article, a high resolution LEED instrument spot profile of the 00-beam of Si/SiO2 interfaces has been taken after the removal of the oxide, and it is demonstrated that beyond the half-width the full profile down to a hundredth of peak intensity gives valuable information.