The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

Electronic properties of two-dimensional systems

The purpose of this article is to describe the basic physical processes involved in the nucleation and growth of thin films of materials on solid surfaces. In this introduction the three modes of crystal growth which are thought to occur on surfaces in the absence of interdiffusion are described, and the relationships between the thermodynamics of adsorption and the kinetics of crystal growth are explored in general terms. This is followed by a brief review of atomistic nucleation theory, explaining the relations of such theories to experimental observables. In the next three sections, recent experimental examples of these three growth modes are given, which are interpreted where possible in terms of nucleation and growth theory. The last section discusses observations on the shapes of growing crystallites and the relation of such observations to nucleation and surface diffusion processes.

https://iopscience.iop.org/article/10.1088/0034-4885/47/4/002/pdf

Nucleation and growth of thin films

The Interaction of Water with Solid Surfaces: Fundamental Aspects Revisited

The bonding of Si atoms at the SiO2/Si interface is determined via high-resolution core level spectroscopy with synchrotron radiation. For oxides grown in pure O2, the SiO2/Si interface is found to contain Si atoms in intermediate oxidation states with a density of 1.5 ± 0.5 × 1015 cm−2. From the density and distribution of intermediate oxidation states, models of the interface structure are obtained. The interface is not abrupt, as evidenced by the non-ideal distribution of intermediate oxidation states and their high density (about 2 monolayers of Si). The finite width of the interface is explained by the bond density mismatch between SiO2 and Si. Annealing in H2 is found to influence the electrical parameters by removing the Pb centers that pin the Fermi level. The distribution of intermediate oxidation states is not affected.

Microscopic structure of the SiO 2 /Si interface

http://nathan.instras.com/documentDB/paper-44.pdf

Surface photovoltage phenomena: theory, experiment, and applications

Growth of ultrathin nanostructured Ag films on Si(111) 7×7: a SPA-LEED study

SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111)

A comparative STM and SPA-LEED study on the evolution of strain induced stripe pattern on Cu/Ni(100)

We demonstrate that the qualitative difference of the Ag surfaces with respect to surface plasmon dispersion (nearly linear for Ag(001) and with strong isotropic quadratic term for Ag(111) and Ag(110)) is due to the presence on Ag(001) of interband transitions which nearly match the surface plasmon energy A similar situation can be created for Ag(110) by K adsorption, obtaining a strong and abrupt decrease of the quadratic term, while the linear term is nearly unaffected, independently of the onset of the missing row reconstruction

https://iopscience.iop.org/article/10.1209/epl/i1998-00377-0/pdf

Influence of surface interband transitions on surface plasmon dispersion: K/Ag(110)

We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.

Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100)

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