An inverter includes an N-channel IGBT, with a freewheeling diode, coupled to a phase of an electric machine, and has a MOSFET coupling a local voltage with a gate of the IGBT and configured to transition from saturation to linear operation as a current flow direction through the diode switches from positive to negative while the IGBT initiates a current through the electric machine.

Dynamic igbt gate drive to reduce switching loss

An improved gate drive circuit is provided for a power device, such as a transistor. The gate driver circuit may include: a current control circuit; a first secondary current source that is used to control the switching transient during turn off of the power transistor and a second secondary current source that is used to control the switching transient during turn on of the power transistor. In operation, the current control circuit operates, during turn on of the power transistor, to source a gate drive current to a control node of the power transistor and, during turn off of the power transistor, to sink a gate drive current from the control node of the power transistor. The first and second secondary current sources adjust the gate drive current to control the voltage or current rate of change and thereby the overshoot during the switching transient.

High efficiency gate drive circuit for power transistors

An inverter device includes: a rectifier circuit that converts an AC power supply into a DC power supply; a smoothing unit that is connected to a subsequent stage of the rectifier circuit; a short-circuit unit that short-circuits the AC power supply via a reactor that improves a power factor of the AC power supply; an inverter unit that converts a direct current from the smoothing unit into an alternating current; and a control unit that controls the inverter unit, wherein a gate drive circuit is connected to a gate terminal of each switching element in the inverter unit, the gate drive circuit includes a first gate voltage line and a second gate voltage line having a voltage value larger than a voltage value of the first gate voltage line, and the voltage value of the first gate voltage line is variable even during an operation of the inverter device.

Inverter device and air conditioner

A method for controlling a path between terminals in a wireless communication system includes measuring a channel quality of a direct path with the another terminal when receiving a request for measuring the channel quality of the direct path from a higher entity, transmitting a first message comprising a result of the measuring the channel quality to the higher entity, and, when receiving a second message to instruct to switch to the direct path from the higher entity, setting the direct path with the another terminal. another embodiments including a terminal and a network entity are also disclosed.

Apparatus and method for switching between default path and direct path in wireless communication system

Exemplary embodiments of present invention relate to an error detecting apparatus for a gate driver improving a reliability of a display apparatus, a display apparatus having the error detecting apparatus, and a method of detecting an error of the gate driver using the error detecting apparatus. An exemplary embodiment discloses an error detecting apparatus including an error detecting part configured to receive a gate signal of a gate driver and determine whether a status of the gate driver is in a normal status or an error status based on the gate signal, a memory configured to store the status of the gate driver, and a signal outputting part configured to selectively output a clock signal and an error signal based on the status of the gate driver stored in the memory.

Error detecting apparatus for gate driver, display apparatus having the same and method of detecting error of gate driver

We describe a controller (130) for controlling a power semiconductor switching device (132) into a selected one of a plurality of states, the states including a fully-off state, a saturated-on state, and at least one intermediate state. The switching device controller includes a voltage sense input (142) to sense a voltage on the device; a current sense input (current feedback) to sense a current passing through the device; a negative feedback control circuit (138) coupled to the sense inputs, a control output (136) to provide to the power semiconductor switching device a drive signal with a response dependent on one or more adjustable parameters; and a circuit controller (140) to control the adjustable parameters responsive to state command data, to control the switching device into a selected state, in particular by controlling an effective resistance of the device. Preferred intermediate states include an active low current state and an active low voltage state.

Semiconductor device controllers

We describe a fault-tolerant power semiconductor switching device control system (100), the control system comprising: a coordinating control system (110); and a plurality of switching device controllers (120) each coupled to said coordinating control system and each configured to control a respective power semiconductor switching device (130); wherein said coordinating control system is configured to send real time switching control data to said switching device controllers to control switching of said power semiconductor switching devices, and to receive real time acknowledgement data from said switching device controllers; wherein a said switching device controller is configured to receive said real time switching control data from said coordinating control system, to control a said power semiconductor switching device responsive to said real time switching control data, and to provide said real time acknowledgement data confirming said switching device control to said coordinating control system; and wherein said coordinating control system is further configured to control further switching of said power semiconductor switching devices responsive to said real time acknowledgement data.

Fault-tolerant power semiconductor switching device control system

We describe techniques suitable for communicating switching data in a control system controlling, for example, kilovolts at hundreds of amps. The system comprises a central controller (110) coupled to sub - controllers (120) and thence to a plurality of switching device controllers (SDs,130), preferably in a tree - structure, each SD controlling a power semiconductor switching device such as an IGBT. The method includes formatting switching control data as one or more switching control data packets comprising data for controlling switching of a combination of the devices, sending these from the central controller to the switching device controllers, at the SDs formatting state data representing states of the switching devices controlled in combination into a plurality of acknowledgement data packets, and sending these back to the central controller. The techniques may be employed for controlling the synchronised switching of, potentially, tens, hundreds or thousands of power semiconductor switching devices.

Switching control system signalling techniques

We describe a system for controlling very large numbers of power semiconductor switching devices (132) to switch in synchronisation. The devices are high power devices, for example carrying hundreds of amps and/or voltages of the order of kilovolts. In outline the system comprises a coordinating control system (110, 120), which communicates with a plurality of switching device controllers (130) to control the devices into a plurality of states including a fully-off state, a saturated-on state, and at least one intermediate state between the fully-off and saturated-on states, synchronising the devices in the at least one intermediate state during switching.

Switching control systems

Semiconductor switching device controllers

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