On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Using density functional theory, the interaction of hydrogen with a nitrogen vacancy in β-Si3N4 is investigated. A single H atom was found to be energetically favorable over non- and doubly protonated vacancies. The traps composed of excess silicon and hydrogen have negative correlation energy which is connected with different distances of Si–H and Si–Si bonds in charged and neutral states. The energy gains after trapping are consistent with trap activation energies in advanced silicon nitride memories. Based on the present results, a model of memory traps is proposed.

Density functional theory study of deep traps in silicon nitride memories

Mixtures and nanolaminates of Al2O3 and TiO2 with different alumina to titania ratios were prepared by atomic layer deposition. The studies were aimed at electrical characterization of metal-insulator-semiconductor capacitors formed by combining an insulating oxide with large band gap (Al2O3) with an oxide with high dielectric permittivity (TiO2). In mixtures, the ratio of Al2O3 and TiO2 growth cycles varied from 10:2 to 5:5 with target layer thickness in the range of 6.2–8.8nm. In Al2O3–TiO2–Al2O3 nanolaminates, the thicknesses of Al2O3 and TiO2 constituent layers were in the ranges of 3–6 and 2–15nm, respectively. Appreciable step coverage on deep trenched substrates with high aspect ratio (1:40) was achieved with short pulse and purge times otherwise suited for the deposition of planar capacitors. The measurements confirmed the model calculations of leakage currents for laminates, mixtures, and pure Al2O3 films predicting the lowest leakage for pure Al2O3 films at all possible equivalent oxide thicknes...

Electrical characterization of AlxTiyOz mixtures and Al2O3–TiO2–Al2O3 nanolaminates

The electronic structure of γ-Al2O3 and α-Al2O3 has been investigated by means of the density functional theory. A comparison of the calculation results with experimental data for amorphous alumina films is also presented. The electronic structure is described in terms of band structure and density of states. It has been found that γ-Al2O3 have similar electronic structure with α-Al2O3 and amorphous Al2O3. Effective electron masses in γ-Al2O3 as well as in α-Al2O3 equal to ≈ 0.4 m 0 that is in a good agreement with the experimentally found tunnel electron mass in amorphous Al2O3. The heavy holes in both alumina crystals are explained by the valence band top forming by O 2p π nonbonding orbitals.

/pdf/electronic-structure-of-aluminum-oxide-ab-initio-simulations-4hep92gywy.pdf

Electronic structure of aluminum oxide: ab initio simulations of α and γ phases and comparison with experiment for amorphous films

In part I of this paper, we study the physicochemical structure and the electrical properties of low-pressure-chemical-vapor-deposited silicon nitride (SiN) aimed to serve as storage layers for nonvolatile memory applications. An in-depth material analysis has been carried out together with a comprehensive electrical characterization on two samples fabricated with recipes yielding rather standard SiN and Si-rich SiN. The investigation points out the impact of SiN stoichiometry and hydrogen content on the electrical characteristics of gate stacks designed in view of channel hot-electron/hole-injection program/erase (P/E) operation and tunnel P/E operation. The extensive and detailed characterization establishes a sound experimental basis for the development of the physics-based trap models proposed in the companion paper.

http://www.diegm.uniud.it/driussi/pubblicazioni/articoli/Ted_I_SiN2011.pdf

Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

Electron energy loss spectroscopy (EELS) in both fixed-probe transmission electron microscopy (TEM) and scanning TEM (STEM) was used to measure elemental profiles of Si, O, and N in the SiOx/SixNy/SiOx/poly-Si stacks deposited on silicon. The results revealed radiation-induced nitrogen segregation to both the Si/SiOx and SiOx/poly-Si interfaces; the extent of nitrogen segregation increased visibly with increasing the radiation dose. The nitrogen diffusion through the oxide layers apparently was accompanied by the diffusion of oxygen into the nitride. Low-noise artifact-free nitrogen profiles across the Si/SiOx interfaces were obtained in STEM by scanning the beam parallel to the layers. These measurements indicated lack of detectable nitrogen segregation to the interfaces.

Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide–nitride-oxide stacks

In this study (i) spatially-resolved electron-energy loss spectroscopy (EELS) in a transmission electron microscope and (ii) secondary ion mass spectroscopy (SIMS) were applied to analyze elemental distributions in the differently processed ONO stacks deposited on Si. Also densities of individual layers in the ONA stacks were measured using X-ray reflectometry (XRR).

Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on silicon

Effects of interfaces and thermal annealing on the electrical performance of the SiO2∕Si3N4∕Al2O3 (ONA) stacks in nonvolatile memory devices were investigated The results demonstrated the principal role of Si3N4∕Al2O3 and Al2O3/metal-gate interfaces in controlling charge retention properties of memory cells Memory devices that employ both electron and hole trappings were fabricated using a controlled oxidation of nitride surface prior to the Al2O3 growth, a high-temperature annealing of the ONA stack in the N2+O2 atmosphere, and a metal gate electrode having a high work function (Pt) These devices exhibited electrical performance superior to that of their existing SiO2∕Si3N4∕SiO2 analogs

SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing

The structure and chemistry of silicon oxide-nitride-oxide (ONO) stacks on silicon with differently processed top oxide layers were analyzed using high-resolution transmission electron microscopy, electron energy loss spectroscopy, secondary ion mass spectroscopy, and X-ray specular reflectometry. The changes observed in the structure and chemistry of the ONO stacks were correlated with the electrical performance of these stacks in flash-memory devices. The results demonstrated that using larger thermal budgets to form the top oxide layer yields (i) broader N distribution across the nitride/oxide interfaces, (ii) reduced H content at the Si/SiO 2 interfaces, (iii) increased density of the top oxide layer, and ultimately, (iv) improved electrical performance of ONO-based memory devices.

Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon

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Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon oxide–nitride-oxide stacks

Structure, chemistry, and electrical performance of silicon oxide-nitride-oxide stacks on silicon

SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing

Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon