Mark John Maslow
ASML Holding
35 Papers
93 Citations
Mark John Maslow is an academic researcher from ASML Holding. The author has contributed to research in topics: Extreme ultraviolet lithography & Resist. The author has an hindex of 7, co-authored 30 publications.
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Papers
Patterning control strategies for minimum edge placement error in logic devices
Jan Mulkens,Michael Hanna,Bram Slachter,Wim Tjibbo Tel,Michael Kubis,Mark John Maslow,Chris Spence,Vadim Timoshkov +7 more
TL;DR: Solutions include overlay and CD metrology based on angle resolved scatterometry, scanner actuator control to enable high order overlay corrections and computational lithography optimization to minimize imaging induced pattern placement errors of devices and metrology targets.
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SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
Joost Bekaert,Paolo Di Lorenzo,Ming Mao,Stefan Decoster,Stephane Lariviere,Joern-Holger Franke,Victor M. Blanco Carballo,Bogumila Kutrzeba Kotowska,Frederic Lazzarino,Emily Gallagher,Eric Hendrickx,Philippe Leray,R. Ryoung-han Kim,Greg McIntyre,Paul Colsters,Friso Wittebrood,Joep van Dijk,Mark John Maslow,Vadim Timoshkov,Ton Kiers +19 more
TL;DR: In this article, the authors present an experimental feasibility study of EUV insertion, for SAQP + Block M2 patterning on an industry-relevant N5 use-case, using optimized illumination conditions and state-of-the-art negative tone resist (Inpria).
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Improving exposure latitudes and aligning best focus through pitch by curing M3D phase effects with controlled aberrations
Joern-Holger Franke,Joost Bekaert,Victor Blanco,Lieve Van Look,Felix Wahlisch,Kateryna Lyakhova,Paul van Adrichem,Mark John Maslow,Guido Schiffelers,Eric Hendrickx +9 more
- 26 Sep 2019
TL;DR: In this paper, the authors show that mask 3D effects can lead to relative pattern shifts of images coming from different pixels in the pupil, and how these shifts can explain M3D phase effects (NILS loss by fading, best focus through pitch variation, Bossung tilts).
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Characterization and control of dynamic lens heating effects under high volume manufacturing conditions
Joost Bekaert,L. Van Look,Geert Vandenberghe,P. van Adrichem,Mark John Maslow,Jan-Willem Gemmink,Hua Cao,Stefan Hunsche,J. T. Neumann,A. Wolf +9 more
TL;DR: The performance of the novel computational lens heating control is demonstrated on wafer and compared with the traditional way of measuring the relevant parameters, thereby demonstrating the advanced correction potential of ASML latest aberration manipulator, called FlexWaveTM.
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Tomorrow’s pitches on today’s 0.33 NA scanner: pupil and imaging conditions to print P24 L/S and P28 contact holes
Joern-Holger Franke,Natalia Davydova,Joost Bekaert,Vincent Wiaux,Vineet Vijayakrishnan Nair,Andre van Dijk,Erik Wang,Mark John Maslow,Eric Hendrickx +8 more
- 04 Jan 2021
TL;DR: In this article, the authors demonstrate P24 line/space and P28 contact hole printing on wafer using a NXE:3400B EUV scanner, and show that the dose sensitivity for P24 L/S can be improved by more than 30% compared to a standard (leaf-shaped dipole) pupil.
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