An interactive television program guide with remote access is provided. The interactive television program guide is implemented on interactive television program guide equipment. A remote program guide access device is connected to the interactive television program guide equipment by a remote access link to provide a user with remote access to program guide functions. An interactive television program guide system based on multiple user television equipment devices in a single household is provided. The system provides a user with an opportunity to adjust program guide settings with a given one of the interactive television program guides. Program guide setting include features related to setting program reminders, profiles, program recording features, messaging features, favorites features, parental control features, program guide set up features (e.g., audio and video and language settings), etc.

Interactive television program guide with remote access

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The ...

Ion beams in silicon processing and characterization

Submicron patterning of 1 in. diameter curved surfaces with a 46 mm radius of curvature has been demonstrated with step and flash imprint lithography (SFIL) using templates patterned by ion beam proximity printing (IBP). Concave and convex spherical quartz templates were coated with 700-nm-thick poly(methylmethacrylate) (PMMA) and patterned by step-and-repeat IBP. The developed resist features were etched into the quartz template and the remaining PMMA stripped. During SFIL, a low viscosity, photopolymerizable formulation containing organosilicon precursors was introduced into the gap between the etched template and a substrate coated with an organic transfer layer and exposed to ultraviolet illumination. The smallest features on the templates were faithfully replicated in the silylated layer.

/pdf/patterning-curved-surfaces-template-generation-by-ion-beam-4k3pt7asln.pdf

Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

Although optical lithography has been extended to far smaller dimensions than was predicted 15 years ago, there are definite physical barriers to extending it to the minimum dimensions of 70 nm that are projected to be required 15 years from now. Both focused, point electron beams and ion beams have been used to write dimensions in resist well below 20 nm, albeit at speeds far too slow for production lithography. Projection systems, which employ a mask and, in effect, produce a large array of beams, can provide both small minimum dimensions and high throughput. Ions are particularly well suited for this because they suffer little or no scattering in the resist, the linewidth is not a strong function of dose (good process latitude), and the resist sensitivity is relatively independent to resist thickness or ion energy. IMS in Vienna, Austria has built two generations of ion projection lithography systems which have demonstrated many of the features needed for high throughput lithography. In these systems a...

A review of ion projection lithography

Echogenic medical devices, methods of fabrication and methods of use are disclosed. The device can be adapted to be inserted into a patient. The echogenic construction can be incorporated into the device at the time of fabrication providing acoustic impedance different from that of the surrounding biological tissue or fluid. The medical device is designed for use with an ultrasound imaging system to provide real-time location of the insertion and guidance at the time the device is implanted in a patient, such as in brachytherapy. Following placement of the device the position can be evaluated over time to insure the device remains in proper aligmnent and functional. Furthermore, the device is designed to incorporate a spacer element at one or both ends to provide separation between radioactive elements.

Echogenic medical device

Masked ion beam lithography (MIBL) was employed to fabricate optical filters as a critical component of an energy conversion system which utilizes semiconductor photovoltaics. This article will describe the operation and novel application of these devices and the MIBL pilot production line being facilitized. The conversion concept, thermophotovoltaics (TPV), when coupled with these MIBL produced bandpass filters, is capable of converting heat to electrical power with >20% conversion efficiency. The EDTEK TPV filter is based on a high density array of slotted antenna elements patterned into a single layer of thin gold film.

Application of optical filters fabricated by masked ion beam lithography

A system for modifying the radiant energy spectrum of a thermal energy source to produce a desired spectral bandwidth profile including a frequency-selective resonant micromesh filter (50) confronting a thermal energy source (80). 'Micromesh filter (50) includes an array of resonant-conductive antenna elements (50', 50'') and a substrate (56) for supporting the antenna elements. Thermal radiation (82) emitted from energy source (80) is filtered by micromesh filter (50), wherein radiant energy at particular wavelengths is reflected back to the energy source, while certain wavelength photons are transmitted through the micromesh filter.

Filter array for modifying radiant thermal energy

Image contrast in proximity ion beam lithography is limited by scattered ions which enter the opaque regions of the mask and exit through the sidewalls of the mask windows. The scattering angles are widely distributed resulting in a ‘‘proximity effect’’ whose range is on the order of the mask‐to‐wafer gap. This problem becomes more severe with increasing pattern density and sets the resolution limit for high density patterns such as interdigital transducers. The only way to counteract this effect is to limit the ion range to a fraction of the mask thickness so that the scattered ions can be recaptured by adjacent sidewalls. This article explores the dependence of image contrast on resolution, pattern density, and beam energy in proximity ion beam lithography. Patterns with feature sizes in the range from 20 to 50 nm and 0.4 μm pitch have been printed with a linewidth change of only 3 nm for a 10% change in dose.

A proximity ion beam lithography process for high density nanostructures

A reactive ion etching (RIE) system with a magnetic field, mainly parallel to the dark space electric field on the etch electrode, is described. This axial‐field RIE system has been used with a molecular bromine (Br2) plasma to fabricate Si stencil masks for ion beam lithography. Silicon dioxide (SiO2) films were used as masking layers, and the etching process was optimized for smallest silicon wall angle at a constant Si/SiO2 selectivity of 50. The optimized process was used to fabricate 0.75–1.0‐μm‐thick Si masks with sub‐50 nm resolution. Over a thickness of 0.75 μm, change in linewidth was found to be less than 10 nm, corresponding to a wall angle of less than 0.2° or 3 mrad.

Reactive ion etching of silicon stencil masks in the presence of an axial magnetic field

Unique challenges to space power systems engineers are posed by the special requirements of lunar and planetary surface missions as well as deep space missions where solar photovoltaic conversion is not a viable option. An approach to these problems is the utilization of radioisotope decay to generate infrared (IR) power (heat) which is converted to useable electric power via the application of IR photovoltaic (PV) technology. This paper presents the progress status of an innovative concept for such a radioisotope thermophotovoltaic (RTPV) power system. Results for IR photovoltaic cell development indicate near theoretical PV performance can be obtained and computer simulation of these cells operating within an RTPV system yield an overall system efficiency of ∼13%. Neutron testing of the TPV cells have demonstrated an approximate 20% power reduction at the end of a 10 year mission lifetime. In addition, the results of a proprietary modification of the isotope heat source will be shown which is predicted to increase system conversion efficiency to ≳25%.

Radioisotope thermophotovoltaic power system utilizing the GaSb IR photovoltaic cell

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