Mao Yang
Peking University
10 Papers
62 Citations
Mao Yang is an academic researcher from Peking University. The author has contributed to research in topics: Band gap & Light emission. The author has an hindex of 6, co-authored 9 publications.
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Papers
First-principles investigation on optical properties of GaN and InGaN alloys
TL;DR: In this paper, the density functional calculations using the Perdew?Burke?Ernzerhof (PBE) functional, the Heyd?Scuseria?Ebrahimi and the local density approximation (LDA)-1/2 methods are performed on GaN and InGaN alloys, and the electronic structures and typical features of the dielectric spectra given by the PBE functional are reasonable except for the underestimation of the band gap.
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Magnetism induced by D3-symmetry tetra-vacancy defects in graphene
TL;DR: In this paper, the magnetism induced by tetra-vacancy defects in graphene was investigated using first principles calculations, and it was shown that the D3-symmetry tetra vacancy defect caused remarkable lattice distortion, which significantly altered the electronic structures and magnetic properties of graphene.
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Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells
TL;DR: In order to understand the mechanism of light emission and to seek the special In-related crystal microstructures associated with the elusive electron localization centers, Wang et al. as discussed by the authors considered four representative In configurations (uniform, small In-N clusters, short In -N chains, and a combination of clusters and chains) in wurtzite Ga-rich In x Ga 1− x N alloys and In X Ga 1 − x N/GaN strained quantum wells (QWs), respectively, and investigated their electronic structures using powerful first-principles calculations.
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Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters
TL;DR: In this paper, the authors investigated electronic structures and light emission of wurtzite In x Ga 1−−x N ( 0 ⩽ x ⩾ 1 ) alloys considering various In distributions, and they found that small In-N clusters strongly localize valence electrons and dominate light emission.
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Electronic structures and optical properties of GaN nanotubes with MgGa–ON co-doping
Mao Yang,Jun-jie Shi,Min Zhang,Shuai Zhang,Zhi-qiang Bao,Shaojun Luo,Tie-cheng Zhou,Tiancong Zhu,Xiang Li,Jia Li +9 more
TL;DR: In this article, the electronic structures and optical properties of single-walled zigzag GaN nanotubes (NTs) with MgGa-on co-doping were investigated using first-principles calculations.
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