Maher Tahhan
University of California, Santa Barbara
11 Papers
41 Citations
Maher Tahhan is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Chemical vapor deposition. The author has an hindex of 7, co-authored 9 publications.
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Papers
Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors
Maher Tahhan,J.A. Logan,Matthew T. Hardy,Mario G. Ancona,Brian Schultz,Brian W. Appleton,T.E. Kazior,David J. Meyer,E.M. Chumbes +8 more
TL;DR: In this article , the performance of gallium-nideal high electron mobility transistors (HEMTs) utilizing a scandium aluminum nitride barrier has been investigated at the Ka-band.
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Suppression of Mg propagation into subsequent layers grown by MOCVD
TL;DR: Low temperature flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers.
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Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN–based devices
Silvia H. Chan,Maher Tahhan,Xiang Liu,Davide Bisi,Chirag Gupta,Onur S. Koksaldi,Haoran Li,Tom Mates,Steven P. DenBaars,Stacia Keller,Umesh K. Mishra +10 more
TL;DR: In this paper, the growth and electrical characterization of (Al,Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, oxygen, and silane as precursors were determined from ellipsometry and XPS measurements.
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High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces
Silvia H. Chan,Stacia Keller,Maher Tahhan,Haoran Li,Brian Romanczyk,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, a high two-dimensional electron gas mobility attained from the regrowth of the AlGaN gating layer on ex situ GaN surfaces was reported, which exhibited a high mobility of 1450 cm2 V−1 s−1 (R sh = 574 ohm/sq) and low dispersion characteristics.
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Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness
Maher Tahhan,Joseph Nedy,Silvia H. Chan,Cory Lund,Haoran Li,Geetak Gupta,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this article, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it, and the results of optimized etch conditions resulting in a 2'μm deep, 0.831'nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence.
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