Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

/pdf/nanoscale-thermal-transport-1frv881kzm.pdf

Nanoscale thermal transport

The zero-temperature equation of state of metals, in the absence of phase transitions, is shown to be accurately predicted from zero-pressure data. Upon appropriate scaling of experimental pressure-volume data a simple universal relation is found. These results provide further experimental confirmation of the recent observation that the total-binding-energy---versus---separation relations for metals obey a universal scaling relation. Important to our results is a parameter $\ensuremath{\eta}$, which is a measure of the anharmonicity of a crystal. This parameter is shown to be essential in predicting the equation of state. A simple formula is given which predicts the zero-temperature derivative of the bulk modulus with respect to pressure.

Universal features of the equation of state of metals

A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the t...

Ion and electron irradiation-induced effects in nanostructured materials

This review provides a comprehensive evaluation of the state-of-knowledge of radiation effects in crystalline ceramics that may be used for the immobilization of high-level nuclear waste and plutonium. The current understanding of radiation damage processes, defect generation, microstructure development, theoretical methods, and experimental methods are reviewed. Fundamental scientific and technological issues that offer opportunities for research are identified. The most important issue is the need for an understanding of the radiation-induced structural changes at the atomic, microscopic, and macroscopic levels, and the effect of these changes on the release rates of radionuclides during corrosion.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/09D70E1FB1A625EC09BB98883C3A5ED3/S0884291400044411a.pdf/div-class-title-radiation-effects-in-crystalline-ceramics-for-the-immobilization-of-high-level-nuclear-waste-and-plutonium-div.pdf

Radiation effects in crystalline ceramics for the immobilization of high-level nuclear waste and plutonium

A comparative molecular dynamics simulation study of collision cascades in two elemental semiconductors and five fcc metals is performed to elucidate how different material characteristics affect primary defect production during ion irradiation. By using simulations of full 400 eV-10 keV collision cascades and contrasting the results on different materials with each other, we probe the effect of the mass, melting temperature, material strength, and crystal structure on the modification of the material due to the cascade. The results show that the crystal structure has a strong effect on many aspects of damage production, while other material characteristics are of lesser overall importance. In all materials studied, isolated point defects produced by the cascade are predominantly interstitials. In semiconductors, amorphous clusters are produced in the cascade core, whereas in metals most of the crystal regenerates, leaving only small vacancy-rich clusters. Large interstitial clusters found in a few events in the heavy metals were observed to form by the isolation of a high-density liquid zone during the recrystallization phase of a cascade.

/pdf/defect-production-in-collision-cascades-in-elemental-bad186v52a.pdf

Defect production in collision cascades in elemental semiconductors and fcc metals

Pressure derivatives of the elastic constants of α-iron to 10 kbs

Progress in the development of a molecular dynamics code for high-energy cascade studies

/pdf/mechanisms-of-defect-production-and-atomic-mixing-in-high-2u8cliavlc.pdf

Mechanisms of Defect Production and Atomic Mixing in High Energy Displacement Cascades: A Molecular Dynamics Study

We present results of a molecular dynamics simulation study of the effect of electron-ion interactions on the dynamics of the thermal spike in Cu. Interatomic forces are described with a modified embedded atom method potential. We show that the electron-ion interaction acts to reduce the lifetime of the thermal spike and therefore the amount of atomic rearrangement that takes place in energetic displacement cascades in Cu. The results point toward the important effect that inelastic energy losses might have on the dynamics of displacement cascades in the subcascade energy regime where the lifetime of the thermal spike is expected to exceed the electron-phonon coupling time.

/pdf/the-effect-of-electronic-energy-loss-on-the-dynamics-of-41f5m4krak.pdf

The effect of electronic energy loss on the dynamics of thermal spikes in Cu

Shock wave interactions arising from near surface displacement cascades

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