In this study, the impact of diffusion time on monocrystalline silicon solar cell has been analysed morphologically, elementally, and electrically by adjusting diffusion time to establish optimized properties for high-efficiency. P-type raw wafers were prepared for diffusion following cleaning and wet etching operation. POCl3 diffusion was done by varying diffusion time with a constant flow rate of process gases. The morphological and elemental studies were carried out with scanning electron microscope (SEM), and energy dispersive x-ray spectroscopy (EDX) respectively. Four-point probe test and Hall Effect measurement were used for studying the electrical characteristics (sheet resistance, resistivity, conductivity, and bulk concentration). From SEM result analysis, noticeable structural damages were found with the increase of doping time. Surface reflectance measurement (SRM) also supported the morphological distortion. Phosphorus, oxygen, silicon, and boron were traced by EDX analysis. The formation of phosphosilicate glass (PSG), as well as the depth of emitter, has been confirmed from the elemental analysis. The emitter length was varied from 2.5 μm to 9 μm. 5 min doped sample showed minimum surface deformation with maximum light absorbance. An acceptable sheet resistance with a compatible conductivity, mobility, and bulk concentration are also found for 5 min diffusion, which could potentially lead to high-efficient solar cell fabrication.

Study and analysis of the morphological, elemental and electrical properties of phosphorus doped monocrystalline silicon solar cell

In this work, we report on the study of the electrical and optical properties of amorphous silicon carbide (a-SiC)-based Schottky diodes for optoelectronic applications. A significant decrease of reflectivity and an enhancement of the passivating properties of more than 97% were reached after a-SiC layer deposition on silicon substrate. The deposited a-SiC film exhibits a dielectric constant of 2.143. Temperature effect on Schottky diode performances was carried out through the analysis of the current–voltage (I–V) characteristics at temperature range of 298–573 K. The ideality factor at room temperature was found to be 1.651, and it was improved to 1.132 when temperature was increased to 573 K. The calculated barrier height of the diode at room temperature was c 0.812 eV and it increased with temperature to reach 1.640 at 573 K. The change in the barrier height was attributed to the effective leakage current at high temperature. Shunt resistance Rsh remained at around 85 KΩ along this range with a slight decrease at high temperature. Series resistance Rs was sharply decreased from 520 Ω at room temperature to 45 Ω at 573 K. Thanks to the optical and electrical characterization performed, we have demonstrated the possibility of using such non hydrogenated amorphous SiC layers to improve the properties of based silicon Schottky diodes.

Effect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications

Precise control of dopant placement is crucial for the reproducible, and reliable, nanoscale semiconductor device fabrication. In this paper, we demonstrate an atomic force microscopy (AFM) probe assisted localized doping of aluminum into an n-type silicon (100) wafer to generate nanoscale counter-doped junctions within two nanometers of the silicon-air interface. The local doping results in changes in electrostatic potential, which are reported as contact potential difference, with nanoscale spatial resolution. In contrast to the literature where nano-mechanical defects in, or contaminants on, silicon substrates can result in measurable changes in the chemical potential of the near-surface, additional thermal treatment was needed to electrically activate the aluminum dopants in our current work. Unfortunately, the thermal activation step also caused the dopants to diffuse and geometric distortions in the doped area, i.e., broadening and blurring of the electrically distinct areas. The results from optimization efforts show that the “active” dopant concentration depended primarily on the thermal anneal temperature; additional AFM-tip dwell time during the aluminum implantation step had no meaningful impact on the electrical activity of the doped sites.

Probe assisted localized doping of aluminum into silicon substrates

The Hydrogenated nanocrystalline cubic silicon carbide (nc-3C-Si:H) based solar cell with interesting efficiency, find her place promoted in photovoltaic  applications. To improve the sunlight absorption and its electrical performances, the structure of the solar cell can be optimized, combining new  materials to form multi-layers solar cells. In this context, the nc-3C-SiC:H, having a wide band gap, excellent optical, electrical and structural properties is used as wide bandgap absorber layer. In this work, we report a theoretical study of new optimized nc-3C-SiC:H/ i-a-Si:H/ a-Si:H/ µc-Si solar cell using the  SCAPS one dimension program. We investigate the temperature and incident light intensity effect on the DC parameters of the solar cell. For the  proposed structure, optimal power conversion efficiency (PCE) of 16.89% is registered under AM1.5G spectrum at room temperature.

/pdf/light-intensity-and-temperature-effect-on-the-dc-parameters-2ndkc2xb.pdf

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

The optimization of the solar cell includes the study of the influence of parameters such as cell thickness, doping levels and profiles, contact configuration and optical confinement on the output to obtain a structure leading to the best performance. The optimal parameters depend on the structure of the solar cell, the quality of the substrate material (lifetime, mobility), the quality of the ohmic contacts, the speed of recombination, etc. The cell to be studied has a structure composed of an n-type gap material (Eg3C-SiC=2.36 eV) as a window layer and a small gap material (EgSi = 1.12eV) as a substrate. The manufacture of a cell based on 3C-SiC / Si is expensive because 3C-SiC is a material that does not exist in the natural state, hence the interest of numerical simulation in order to determine the most important parameters for the operation of heterojunction solar cells (3C-SiC / Si), to minimize losses and to optimize the physical and geometrical parameters of the cell in order to obtain maximum efficiency. The most important recombination sources are Shockley-Read-Hall recombinations in the substrate, Auger recombinations and recombinations on the front of the cell. To study the influence of the various parameters, we first defined a reference solar cell with a set of fixed parameters, then we varied the parameters one by one (the others remaining fixed) in order to analyze their influences. On the characteristics of the solar cell, we obtained a Voc of 0.633 6 V, a short-circuit current of 37.82 mA / cm2, a form factor of 83.38%, which gives us a yield of 19.98%.

	 

	Key words: Solar cells, numerical study, heterostructure, silicon carbide, Silicon.

/pdf/study-by-numerical-simulation-of-a-pn-solar-cell-in-3c-sic-1o3akxxd2a.pdf

Study by numerical simulation of a PN solar cell in 3C-SiC / Si

An actual trend to enhance solar cells efficiency is to build multijunction cells, creating a bandshape wavelength collection. However, the best multijuction cells are actually made of III-V compounds when silicon and its alloys don’t lead to high efficiency devices. In this article, we study a 3C-SiC/Si heterojunction as a first step for 3C-SiC/Si tandem cells. Four samples were fabricated by depositing 3C-SiC on Si wafers with different SiC doping levels. Simulations of the structures are performed, as well as optical and electrical characterizations of the heterojunction cells.

New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement

In this work, we try to make a p-type monocristalline silicon pn junction using an easier doping method. We combined spin-coating thin film deposition method and solid doping technique. This technique can be considered as variety of the SOD method. In this study, phosphorous-based gel compounds was prepared and deposited by spin coating. Heat treatment would thus, after deposition of thin layer, diffuse phosphorus atoms into the substrate to obtain a pn diode. Study by Secondary Ions Mass Spectrometry (SIMS) showed a surface phosphorus concentration of 10 20 at/cm 3 incorporated within the silicon substrate to a depth of 300 nm. The microwave phase-shift (µW-PS) technique is used to determine the bulk lifetime ( τ b) of minority carriers. In this technique, the phase-shift between a microwave beam (10 GHz) and a sine-modulated infrared excitation is related to τb and to the surface recombination velocity (S) (Palais, Clerc, Arcari, Stemmer & Martinuzzi, 2003). The lifetime τb mean values vary from 7 µs for a p-type Silicon to 97 µs for phosphorus-diffused silicon. The surface recombination velocity S varies from around 500 to 1000 cm.s -1 .

/pdf/simple-method-for-phosphorus-diffusion-on-oriented-p-type-1vk4n5b715.pdf

Simple Method for Phosphorus Diffusion on Oriented P-Type Silicon Using New Phosphorus Gel as Dopant

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New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement

Simple Method for Phosphorus Diffusion on Oriented P-Type Silicon Using New Phosphorus Gel as Dopant

Study by numerical simulation of a PN solar cell in 3C-SiC / Si