M. Shafi
University of Nottingham
30 Papers
100 Citations
M. Shafi is an academic researcher from University of Nottingham. The author has contributed to research in topics: Rhodamine 6G & Molecular beam epitaxy. The author has an hindex of 11, co-authored 17 publications.
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Papers
Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
Mohamed Henini,Jordi Ibáñez,Martin Schmidbauer,M. Shafi,Sergei V. Novikov,Lyudmila Turyanska,Sergio I. Molina,David L. Sales,M. F. Chisholm,Jan Misiewicz +9 more
TL;DR: In this paper, the growth by molecular beam epitaxy of GaBixAs1−x epilayers on (311)B GaAs substrates was reported, and the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the ( 311)B epilayer than in (001) epil layers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy.
Highly Sensitive and Recyclable Surface-enhanced Raman Scattering (SERS) substrates based on Photocatalytic activity of ZnSe Nanowires
M. Shafi,Maoxia Zhou,Pengyi Duan,Wenying Liu,Wenjie Zhang,Zhipeng Zha,Jinjuan Gao,Sartaj Wali,Shouzhen Jiang,Baoyuan Man,Meilin Liu +10 more
- 01 Jan 2022
TL;DR: In this paper , a novel recyclable SERS substrates were synthesized from ZnSe nanowires using chemical vapor deposition and achieved the value of EF 6.92 × 107 for the Zn/Se ratio 1:1.2.
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LSPR optical fiber sensor based on 3D gold nanoparticles with monolayer graphene as a spacer.
Jingwen Feng,Jinjuan Gao,Wen Yang,Runcheng Liu,M. Shafi,Zhipeng Zha,Cong Liu,Shicai Xu,Tingyin Ning,Shouzhen Jiang +9 more
TL;DR: Based on a monolayer graphene/gold nanoparticles (Grm/Au NPs) three-dimensional (3D) hybrid structure, a D-shaped plastic optical fiber (D-POF) LSPR sensor was fabricated using a facile two-step method as discussed by the authors .
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Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
Jordi Ibáñez,R. Oliva,M. de la Mare,Martin Schmidbauer,Sergi Hernández,Paolo Pellegrino,David J. Scurr,Ramón Cuscó,Lluís Artús,M. Shafi,R. H. Mari,Mohamed Henini,Qiandong Zhuang,A. M. R. Godenir,Anthony Krier +14 more
TL;DR: In this paper, structural and optical characterization of InAs1−xNx epilayers grown by molecular beam epitaxy on InAs substrates (x≲2.2%) is performed.
Electrical properties of nitrogen‐related defects in n‐type GaAsN grown by molecular‐beam epitaxy
TL;DR: In this paper, the number of electron traps in each sample detected by the DLTS measurements is found to be dependent on the nitrogen contents, and new shallow traps with energies ranging from 0.036 to 0.13 eV have been detected in samples with nitrogen content in the range 0.2% to 1.4%.
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