M. Schmidt

TL;DR: In this paper, experimental results on tunneling field-effect transistors featuring arrays of uniaxially strained and unstrained silicon nanowires were presented, and negative differential conductance in the output characteristics were attributed to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.

TL;DR: In this article, a tensile-strained Si channel and a compressively strained Si 0.5 Ge 0.6 source were used for TFETs with an average subthreshold swing S of 80mV/dec over a drain current range.

TL;DR: In this article, a self-aligned process was developed to form the p-i-n TFETs which greatly simplifies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dopant segregation.

TL;DR: The comparison of clonal rankings under batch and fed-batch-like conditions emphasizes the necessity to perform screenings under process-relevant conditions and will contribute to an accelerated development of protein production processes.