Silicon based Super-junction power-MOSFETs (SJ-MOS) are a crucial part of nowadays power conversion systems, like Switched Mode Power Supplies. Due to the high electric fields in the drift zone of these devices and the typical usage profiles SJ-MOSs are sensitive to ionizing radiation, in particular to single event effects (SEE). It has been shown, that even at sea level radiation related device failure due to single event burnout (SEB) can occur. Modern SJ-MOSs are based on an internally complex, real three-dimensional structure, like pillar-shaped, high aspect ratio doping regions. The design of next generation devices, with improved electrical performance, while keeping the sensitivity to SEE on the same level is very challenging. Three-dimensional ion mapping techniques with 55 MeV carbon, 110 MeV sulphur, 417 MeV calcium and 1.16 GeV gold, as presented in this paper, will result in more comprehensive state of the art failure rate testing. So, in particular three-dimensional ion mapping will assist to generate more in depth knowledge of SEE device failure mechanisms. 

Sensitivity study of super-junction power MOSFETs by spatial and depth resolved heavy ion SEE mapping with various bias, LETs and ion ranges

In this work direct heavy ion mapping of Single Event Effect (SEE) and Single Event Burnout (SEB) of super-junction power MOSFETs utilizing a high energy (55MeV) carbon micro-beam is presented The resulting maps are sub-structurally resolved Effect location, signal level and possible connections to cosmic radiation events are discussed

Radiation Hardness Testing of Super-Junction Power Mosfets by Heavy Ion Induced SEE Mapping

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Radiation Hardness Testing of Super-Junction Power Mosfets by Heavy Ion Induced SEE Mapping