It is well known that silicon-rich oxide (SRO) shows intense photoluminescence (PL). In this work, the authors studied the relationship of the surface morphology and the PL emission. PL spectra of SRO as a function of the excess silicon, temperature, and time of thermal annealing were obtained. The same samples were studied using transmission electronic microscopy and atomic force microscopy to determine their microstructure and surface morphology. A relationship between silicon agglomerates in the SRO and the surface morphology was obtained. Then, the red PL emission was related to the surface morphology. The authors found that the surface roughness is an important parameter for the high red emission of SRO.

Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films

Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

/pdf/emission-mechanisms-of-si-nanocrystals-and-defects-in-sio-2-42ivu006ts.pdf

Emission mechanisms of Si nanocrystals and defects in SiO 2 materials

The electrical properties of silicon-rich oxide (SRO) films in metal–oxide–semiconductor-like structures were analysed by current versus voltage (I–V) and capacitance versus voltage (C–V) techniques. SRO films were thermally annealed to activate the agglomeration of the silicon excess in the form of nanoparticles (Si-nps). High current was observed at low negative and positive voltages, and then at a certain voltage (Vdrop), the current dropped to a low conduction state until a high electric field again activated a high conduction state. C–V measurements demonstrated a capacitance reduction at the same time as the current dropped, but without appreciable flat-band voltage (VFB) shifting. The reduction in capacitance and current was also observed after applying an electrical stress. These effects are ascribed to the annihilation of conductive paths created by Si-nps. An equivalent circuit is used to explain the capacitance and current reductions. Finally, the conduction mechanism is also analysed by making use of trap assisted tunnelling and Fowler–Nordheim tunnelling at low and high electric fields, respectively.

http://iopscience.iop.org/article/10.1088/0957-4484/20/4/045201/pdf

The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides

Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

/pdf/on-the-origin-of-light-emission-in-silicon-rich-oxide-29vj0ragz8.pdf

On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition

Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 degrees C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths--across the SRO film--has been proposed to explain the EL behaviour in these devices.

https://iopscience.iop.org/article/10.1088/0957-4484/21/8/085710/pdf

DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films.

A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO–PECVD films, whereas in SRO–LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO–PECVD films contain a higher content of nitrogen than SRO–LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.

Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

The off-stoichiometry silicon oxide SiOx (x < 2), known as silicon-rich oxide (SRO), and silicon-implanted thermal silicon oxide (SITO) have shown poor photoluminescence (PL) at room temperature. Recently, many efforts to increase the PL in these materials have been made. In our experiments, a considerable increase of the visible emission has been observed when the SRO is super-enriched by silicon implantation. In this experiment, SITO and LPCVD-SRO with different silicon excess, Si implanted and no implant were studied. Different doses of silicon, and annealing in N2 at different temperature and times were used. PL response was measured before and after annealing. The emission is explained as the decay between traps in the oxide gap. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Silicon excess and thermal annealing effects on the photoluminescence of SiO2 and silicon rich oxide super enriched with siliscon implantation

Compositional, structural and optical properties of silicon rich oxide (SRO) films containing different silicon excess were investigated using X ray photoelectron spectroscopy (XPS), Raman spectroscopy, energy filtered transmission electron microscopy (EFTEM) and photoluminescence (PL). The XPS-Si2p peaks fitting showed the presence of Si - Si 4 tetrahedra only for the SRO film with the highest silicon excess. Raman spectroscopy revealed amorphous phase silicon in the SRO films with lowest silicon excess; when it was increased, a sharp peak at around 517 cm -1 appeared, which corresponds to crystalline silicon. Si-nanoclusters were slightly observed by EFTEM in the SRO film with the lowest silicon content. They became more evident when the silicon excess was increased, in agreement to Raman spectra. A strong PL was observed in the SRO films with low silicon excess. However, in SRO films with the highest silicon excess, where the silicon agglomeration is greater, the PL practically disappeared. According to these results, we have analysed the dependence of photoluminescence on the composition and structure of the SRO films.

Spectroscopical analysis of luminescent silicon rich oxide films

A compositional study of silicon rich oxide (SRO) films obtained by low pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) is presented. As deposited and annealed SRO films were characterized by mean Infrared (IR) and x-ray photoelectron spectroscopy (XPS) techniques. IR spectra from SRO obtained by PECVD showed absorption bands related to silicon-hydrogen bonds. However, for SRO-LPCVD, only vibration bands due to Si-O motion were observed. Moreover, XPS analysis demonstrated that SRO-PECVD films contain a higher nitrogen concentration than the LPCVD ones. All the SRO films were subjected to thermal annealing in order to investigate the changes in the composition of the films. The hydrogen and nitrogen have shown being an important parameter to influence the optical properties of these films.

Compositional study of Silicon Rich Oxide films.

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Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

Silicon excess and thermal annealing effects on the photoluminescence of SiO2 and silicon rich oxide super enriched with siliscon implantation

Spectroscopical analysis of luminescent silicon rich oxide films

Compositional study of Silicon Rich Oxide films.