M. Rieger

TL;DR: Effects of LO-phonon disturbances on the transient and steady-state high\char21{}dc-field response of n-type gallium arsenide are studied by implementing the simulation of nonequilibrium phonon distributions into the conventional Monte Carlo algorithms for hot-carrier transport in semiconductors.

TL;DR: In this article, a novel ensemble Monte Carlo algorithm was developed to simulate nonequilibrium phonon effects in the transient and steady-state high-field conductivity of bulk n-GaAs, and the interplay of the electronic intervalley transfer with the mutual drag and heating between the carriers and longitudinal optical phonons was demonstrated over a wide range of fields, temperatures and carrier densities.

TL;DR: In this article, a new lattice gas simulation technique for semiconductor transport is presented, which is comparable in accuracy to Monte Carlo simulations but is capable of dealing with arbitrarily complex spatial inhomogeneities, nonlinear dynamical effects and carrier instabilities with only a minimal additional cost in computer time, and runs orders of magnitude faster on parallel hardware.

TL;DR: In this article, a novel numerical method was developed for solving the steady-state hot electron coupled Boltzmann equations, which combines a least-square matrix and an iterative technique for getting the distribution functions of the electrons and of the LO phonons and associated average values.