Silicon samples were gold-diffused at different temperatures (870-950°C) and implanted with He ions at 1.6 MeV and fluences ranging from 2 × 10 16 up to 10 17 cm -2 . The implantation induced defects observed by conventional and high resolution cross section electron microscopy were found to be essentially cavities 10 to 100 nm in size which are faceted mainly along {111}, but also along {110} and {100} planes. The cavities are located at the sample depth predicted by the transport range of ions in matter simulation. Secondary ion mass spectroscopy profiles exhibit a shouldered shape with a maximum at the projected range. They demonstrate that the cavities are very efficient sinks for Au atoms; the shoulder of the profile could be related to the presence of smaller cavities and dislocations in the vicinity of the projected range. Gold concentration in the cavity area was below the detection limit of the energy dispersive spectroscopy technique, but both Cu and Ni contamination gave rise to silicides and could be chemically analysed. Cu 3 Si precipitates have grown in cavities as already reported in the literature, while NiSi 2 precipitates were observed for the first time in cavities.

Gettering of diffused Au and of Cu and ni contamination in silicon by cavities induced by high energy he implantation

Les metaux nobles (Au, Ag, Pt, Ir, Pd et Ru) sont utilises en salle blanche pour la realisation de dispositifs electroniques ou peuvent etre apportes par les equipements de fabrication (composants d’alliage par exemple). Il a ete montre qu’ils pouvaient impacter fortement les dispositifs. Il est alors necessaire de proceder au controle des equipements pour diagnostiquer au plus tot une contamination. Or, il n’existe pas de technique industrielle pour leur suivi et ce a des niveaux d’au moins 5.109 at.cm-2 - recommandation ITRS. Il se pose la question de la pertinence de ces recommandations en fonction des types de dispositifs (SPAD notamment). Dans un premier temps, les travaux ont consiste a developper une technique physico-chimique pour l’analyse des metaux nobles sur silicium par VPD-DC-ICPMS. Enfin, leur dangerosite vis-a-vis des equipements et des dispositifs a ete evaluee d’apres leur comportement en temperature et le DCR genere sur SPAD.

Mesure et dangerosité des métaux nobles pour les photodétecteurs à avalanche à photon unique

http://digitalknowledge.cput.ac.za/bitstream/11189/4462/3/Moloi_SJ_McPherson_M_AppSci_2013.pdf

RBS measurements of metal-doped p-type silicon used for radiation-hard detectors

In this work we show that the temperature and the applied cooling rate during a platinum diffusion process strongly influence the electrical conductivity in weakly phosphorus doped silicon. Diffusions were done in the range of 800–950°C for several hours. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are slowly cooled (5°C/min). Only a compensation of the phosphorus donors is observed when samples are quenched. This mechanism is reversible. Five Pt related deep levels, including the acceptor level at 0.23 eV from the conduction band, are observed. One of them is located at 0.427 eV from the valence band and can be related to the acceptor state at the origin of the type conversion mechanism. This acceptor state can be associated with a complex defect based on the association of a substitutional Pt atom with interstitial atoms (Pt, O) or intrinsic point defects.

https://iopscience.iop.org/article/10.1143/JJAP.40.3938/pdf

Influence of the Applied Cooling Rate on the Type Conversion of Platinum Diffused N-Type Silicon

Unlike dopants, metal impurities are rarely used in semiconductor devices. Nevertheless, transition metals are technologically important, since their presence in silicon is difficult to avoid and their interaction with free charge carriers may influence electronic devices [1]. An illustrative example is given by copper in silicon. As few as 1012 copper atoms per cubic centimeter of silicon may lead to significant yield loss in submicron integrated circuit manufacturing [2–4]. The high electrical and thermal conductivity of copper thin films has nevertheless pushed the electronics industry to introduce copper interconnects into its products in spite of the enhanced risk of copper contamination. Only a perfect control of copper impurities in silicon technology allows the industry such a performance. Another technological issue related to transition metals appears in the silicon photovoltaic industry, where cost reductions are pursued by using low-quality silicon with large amounts of metal impurities [5, 6]. Defect reactions occurring during device processing determine the final energy conversion efficiency. Understanding the reaction paths of the dominant impurities, their electrical activity in various states and their mutual interaction has helped in optimizing the performance of photovoltaic devices.

Transition Metal Impurities in Silicon

Gold and platinum depth profile measurements were reported using different techniques (secondary ion mass spectroscopy, SIMS; neutron activation analysis, NAA; capacitance–voltage measurement, C–V) which were able to detect low concentrations of the metals. The kick-out simulation reproduced well the experimental profiles, provided an eventual metal accumulation was taken into account resulting in a shift of the metal source and of the self-interstitials sink. The influence of high As concentration on the Au solubility limit was noticed also.

Gold and platinum profiles in fast power devices

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Gold and platinum profiles in fast power devices