M. Raymond
Freescale Semiconductor
15 Papers
88 Citations
M. Raymond is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Metal gate & High-κ dielectric. The author has an hindex of 7, co-authored 15 publications. Previous affiliations of M. Raymond include TSMC.
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Papers
Challenges for the integration of metal gate electrodes
James K. Schaeffer,C. Capasso,L. R. C. Fonseca,S. Samavedam,David C. Gilmer,Yong Liang,S. Kalpat,B. Adetutu,Hsing-Huang Tseng,Y. Shiho,Alexander A. Demkov,Rama I. Hegde,W.J. Taylor,Rich Gregory,J. Jiang,E. Luckowski,M. Raymond,K. Moore,Dina H. Triyoso,D. Roan,B. E. White,Philip J. Tobin +21 more
- 13 Dec 2004
TL;DR: In this article, the integration challenges for metal gate electrodes including the presence of Fermi level pinning and the impact of interface chemistry on the effective metal work function are discussed.
82
Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor
D. Roberts,W. Johnstone,Hector Sanchez,O.P. Mandhana,D. Spilo,J. Hayden,Edward O. Travis,B. Melnick,M. Celik,Byoung W. Min,J. Edgerton,M. Raymond,E. Luckowski,C. Happ,Ana Olivia Ruíz Martínez,B. Wilson,Pak K. Leung,T. Garnett,D. Goedeke,T. Remmel,K. Ramakrishna,B. E. White +21 more
- 05 Dec 2005
TL;DR: In this article, a reliable metal-insulator-metal (MIM) capacitor exceeding 250nF has been integrated into the copper/low-K backend of a high-performance 90nm SOI technology.
22
Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability
Rama I. Hegde,Dina H. Triyoso,Philip J. Tobin,S. Kalpat,M. Ramon,H.-H. Tseng,James K. Schaeffer,E. Luckowski,W.J. Taylor,C. Capasso,David C. Gilmer,M. Moosa,A. Haggag,M. Raymond,D. Roan,J.-Y. Nguyen,L.B. La,E.A. Hebert,R. Cotton,X.-D. Wang,Stefan Zollner,Rich Gregory,D. Werho,R. Rai,L. R. C. Fonseca,Matthew W. Stoker,C. Tracy,B.W. Chan,Yuan-Hung Chiu,Bruce E. White +29 more
- 05 Dec 2005
TL;DR: In this paper, the authors report on the development of a novel hafnium zirconate (HfZrOx) gate dielectric with a TaxCy metal gate.
14
Patent
Process of forming a semiconductor device and a semiconductor device
Prasad V. Alluri,M. Raymond,Sucharita Madhukar,Roland R. Stumpf,Chun-Li Liu,Clarence J. Tracy +5 more
- 17 May 2000
TL;DR: In this paper, a process for forming a capacitor with a high-k dielectric or ferroelectric layer within a semiconductor device is used to reduce the likelihood of oxidation or materials interactions between that layer and an underlying layer.
9
Patent
A method of making metal gate transistors
James K. Schaeffer,David C. Gilmer,M. Raymond,Philip J. Tobin,Srikanth B. Samavedam +4 more
- 30 Jun 2006
TL;DR: In this paper, a semiconductor device has a gate with three conductive layers over a high K gate dielectric, the first layer is substantially oxygen free and the second layer is a conductive oxygen-bearing metal.
8