Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses. In particular, a 1 nm thickness variation of the Ta layer can change the magnitude of the effective field by nearly two orders of magnitude. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects contributing to it. Our results illustrate that the presence of atomically thin metals can profoundly change the landscape for controlling magnetic moments in magnetic heterostructures electrically.

▲Current-induced effective field vector in Ta│CoFeB│MgO

Magnetic texture based magnonics

In the last twenty years, numerical modeling has become an indispensable part of magnetism research. It has become a standard tool for both the exploration of new systems and for the interpretation of experimental data. In the last five years, the capabilities of micromagnetic modeling have dramatically increased due to the deployment of graphical processing units (GPU), which have sped up calculations to a factor of 200. This has enabled many studies which were previously unfeasible. In this topical review, we give an overview of this modeling approach and show how it has contributed to the forefront of current magnetism research.

https://iopscience.iop.org/article/10.1088/1361-6463/aaab1c/pdf

Fast micromagnetic simulations on GPU—recent advances made with $\mathsf{mumax}^3$

We provide a simple explanation of complex magnetic patterns observed in ferromagnetic nanostructures. To this end we identify elementary topological defects in the field of magnetization: ordinary vortices in the bulk and vortices with half-integer winding numbers confined to the edge. Domain walls found in experiments and numerical simulations in strips and rings are composite objects containing two or more of the elementary defects.

/pdf/fractional-vortices-and-composite-domain-walls-in-flat-4aykzwb87c.pdf

Fractional vortices and composite domain walls in flat nanomagnets

Synthesis of Wafer-Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement.

/pdf/transverse-domain-wall-profile-for-spin-logic-applications-45zaztsj2f.pdf

Transverse Domain Wall Profile for Spin Logic Applications

Establishing ultimate spin current efficiency in graphene over industry-standard substrates can facilitate research and development exploration of spin current functions and spin sensing. At the sa ...

Ultimate Spin Currents in Commercial Chemical Vapor Deposited Graphene

We experimentally show the effect of enhanced spin-orbit and RKKY induced torques on the current-induced motion of a pair of domain walls (DWs), which are coupled antiferromagnetically in synthetic antiferromagnetic (SAF) nanowires. The torque from the spin Hall effect (SHE) rotates the Neel DWs pair into the transverse direction, which is due to the fact that heavy metals of opposite spin Hall angles are deposited at the top and the bottom ferromagnetic interfaces. The rotation of both DWs in non-collinear fashion largely perturbs the antiferromagnetic coupling, which in turn stimulates an enhanced interlayer RKKY exchange torque that improved the DW velocity. The interplay between the SHE-induced torque and the RKKY exchange torque is validated via micromagnetic simulations. In addition, the DW velocity can be further improved by increasing the RKKY exchange strength.

/pdf/role-of-rkky-torque-on-domain-wall-motion-in-synthetic-31156pufu8.pdf

Role of RKKY torque on domain wall motion in synthetic antiferromagnetic nanowires with opposite spin Hall angles.

Controlling domain wall (DW) generation and dynamics behaviour in ferromagnetic nanowire is critical to the engineering of domain wall-based non-volatile logic and magnetic memory devices. Previous research showed that DW generation suffered from a random or stochastic nature and that makes the realization of DW based device a challenging task. Conventionally, stabilizing a Neel DW requires a long pulsed current and the assistance of an external magnetic field. Here, we demonstrate a method to deterministically produce single DW without having to compromise the pulse duration. No external field is required to stabilize the DW. This is achieved by controlling the stray field magnetostatic interaction between a current-carrying strip line generated DW and the edge of the nanowire. The natural edge-field assisted domain wall generation process was found to be twice as fast as the conventional methods and requires less current density. Such deterministic DW generation method could potentially bring DW device technology, a step closer to on-chip application.

/pdf/all-electrical-deterministic-single-domain-wall-generation-p79oc658h7.pdf

All-electrical deterministic single domain wall generation for on-chip applications

https://iopscience.iop.org/article/10.1088/2515-7639/ac1247/pdf

Experimental advances in charge and spin transport in chemical vapor deposited graphene

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