Overview of recent activities in the development of active and passive thin film waveguides, waveguide lasers and laser-deposited waveguiding films is given. Published results and parameters are summarized. The focus is on films fabricated by laser deposition.

Progress in Optical Waveguiding Thin Films

Amorphous thin films (300–500 nm) of ultrahard AlMgB10 with oxygen and carbon impurities were grown on Si (100) substrates at 300 K using a solid target of AlMgB14 containing a spinel phase (MgAl2O4) and using a 120 fs pulsed, 800 nm wavelength Ti:sapphire laser. The films were subsequently annealed in argon gas up to 1373 K for 2 h. Scanning electron microscopy (SEM) was used to examine the particulate formation, atomic force microscopy was employed to characterize the film surface topography, x-ray diffraction and transmission electron microscopy were used to determine the microstructure, x-ray photoelectron spectroscopy was performed to examine the film composition, and nanoindentation was employed to study the hardness of thin films. The as-deposited and postannealed films (up to 1273 K) had a stochiometry of AlMgB10 with a significant amount of oxygen and carbon impurities and exhibited amorphous structures for a maximum hardness of 40±3 GPa. However, postannealing at higher temperatures led to crystallization and transformation of the film to SiB6 with a substantial loss in hardness. Results are also compared with our previous study on 23 ns, 248 nm wavelength (KrF excimer) pulsed laser deposition of AlMgB14 reported in this journal [Y. Tian, A. Constant, C. C. H. Lo, J. W. Anderegg, A. M. Russell, J. E. Snyder, and P. A. Molian, J. Vac. Sci. Technol. A 21, 1055 (2003)].Amorphous thin films (300–500 nm) of ultrahard AlMgB10 with oxygen and carbon impurities were grown on Si (100) substrates at 300 K using a solid target of AlMgB14 containing a spinel phase (MgAl2O4) and using a 120 fs pulsed, 800 nm wavelength Ti:sapphire laser. The films were subsequently annealed in argon gas up to 1373 K for 2 h. Scanning electron microscopy (SEM) was used to examine the particulate formation, atomic force microscopy was employed to characterize the film surface topography, x-ray diffraction and transmission electron microscopy were used to determine the microstructure, x-ray photoelectron spectroscopy was performed to examine the film composition, and nanoindentation was employed to study the hardness of thin films. The as-deposited and postannealed films (up to 1273 K) had a stochiometry of AlMgB10 with a significant amount of oxygen and carbon impurities and exhibited amorphous structures for a maximum hardness of 40±3 GPa. However, postannealing at higher temperatures led to cryst...

Femtosecond pulsed laser deposition of amorphous, ultrahard boride thin films

Dependence of the phase and magnitude of the response of Y–Ba–Cu–O edge transition bolometers on the superconducting transition is studied. The responses of both large and small area devices were investigated and several anomalies are observed. The response of small area LaAlO3 devices considerably differed from that expected based on the dR/dT curve. This discrepancy is observed to be strongly dependent on the superconducting transition. Both the phase and magnitude/(dR/dT) of the response of the devices showed abrupt changes for below the Tc-onset when measured versus temperature, while the phase variation also showed strong dependence on the modulation frequency. We present the analysis and propose mechanisms responsible for the modulation frequency dependence of the response characteristics versus temperature, within the superconductivity transition region of the devices.

/pdf/effects-of-the-superconductivity-transition-on-the-response-1amijeeeff.pdf

Effects of the superconductivity transition on the response of YBCO edge transition bolometers

(Ti, Al)N/MoN and CrN/MoN multilayered films were synthesized on Si (100) surface by multi-cathodic arc ion plating system with various bilayer periods. The elemental composition and depth profiling of the films were investigated by Rutherford backscattering spectroscopy (RBS) using 2.42 and 1.52 MeV Li2+ ion beams and different incident angles (0°, 15°, 37°, and 53°). The microstructures of (Ti, Al)N/MoN multilayered films were evaluated by X-ray diffraction. The multilayer periods and thickness of the multilayered films were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM) and then compared with RBS results.

/pdf/rbs-depth-profiling-analysis-of-ti-al-n-mon-and-crn-mon-1tietca3v9.pdf

RBS Depth Profiling Analysis of (Ti, Al)N/MoN and CrN/MoN Multilayers

The growth of BaTiO3 films on (001) MgAl2O4 substrates by pulsed laser deposition technique

http://yoksis.bilkent.edu.tr/pdf/files/10.1016-S0169-4332(00)00599-7.pdf

Superconducting and electro-optical thin films prepared by pulsed laser deposition technique

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Superconducting and electro-optical thin films prepared by pulsed laser deposition technique