This paper describes a microcontroller-based laboratory technique for automatic in situ measurement of the energy gap of germanium. The design is based on the original undergraduate laboratory experiment in which students manually measure the variation of the reverse saturation current of a germanium diode with temperature using a current-to-voltage converter. After collecting the results students later analyse them to determine the energy gap of the semiconductor. The objective of this work was to introduce interfacing and computerized measurement systems in the undergraduate laboratory. The microcontroller-based data acquisition system and its implementation in automatic in situ measurement of the band gap of germanium diode is presented. The system which uses an LM335 temperature sensor for measuring temperature transmits the measured data to the computer via the RS232 serial port while a C++ software program developed to run on the computer monitors the serial port for incoming information sent by the microcontroller. This information is displayed on the computer screen as it comes and automatically saved to a data file. Once all the data are received, the computer performs least-squares fit to the data to compute the energy gap which is displayed on the screen together with its error estimate. For the IN34A germanium diode used the value of the energy gap obtained was 0.50 ± 0.02 eV.

https://iopscience.iop.org/article/10.1088/0143-0807/27/3/007/pdf

In situ measurement of the energy gap of a semiconductor using a microcontroller-based system

The junction-voltage temperature relationship of a laser diode is used to determine the temperature of the device in the range −20 to 120 °C. We consider changes that occur to this relationship when the diode is driven at its nominal operating current and above. It is found that estimates of the parameters that appear in a function fitted to the voltage-temperature data are sensitive to driving currents at and above the nominal operating current. Changes in parameter estimates are attributed to degradation due to surface recombination at facets occurring when the laser diode is overdriven. An indication of this degradation is the change in the ideality factor that occurs as the current to the device is raised. This work indicates that the temperature of the junction can be determined over the range −20 to 120 °C with a standard uncertainty of ≈0.5 °C.

Effect of injection current on the repeatability of laser diode junction voltage-temperature measurements

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

/pdf/light-emitting-diodes-ubzde6g9qc.pdf

Light-emitting diodes

Band-gap measurements based upon the temperature dependence of the electrical conductivity of a forward biased p-n junction are described Results are given for germanium, silicon, gallium arsenide and gallium phosphide

Band-gap measurements based upon the behaviour of a p-n junction

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Band-gap measurements based upon the behaviour of a p-n junction