M. Miczek
Silesian University of Technology
19 Papers
111 Citations
M. Miczek is an academic researcher from Silesian University of Technology. The author has contributed to research in topics: Photoluminescence & Surface states. The author has an hindex of 8, co-authored 19 publications.
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Papers
Capacitance?Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
TL;DR: In this article, the potential modulation and interface states of Al2O3/Al0.75N/GaN structures prepared by atomic layer deposition (ALD) were characterized by capacitance-voltage measurements.
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Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors
TL;DR: In this paper, the impact of states at the insulator/AlGaN interface on the capacitance-voltage (C-V) characteristics of a metal/insulator/alGaN/GaN heterostructure (MISH) capacitor was examined using a numerical solver of a Poisson equation and taking into account the electron emission rate from the interface states.
Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures
TL;DR: In this paper, the effect of electronic states at insulator/AlGaN and AlGaN/GaN interfaces on capacitance-voltage (C-V) characteristics of a metal/insulator/semiconductor (MIS) capacitor with an Al-GaN layer and a MISH heterostructure (MISH) with an anisotropic GaN layer was studied theoretically taking into account extremely slow electron emission from the deep interface levels.
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Surface electronic properties of sulfur-treated GaAs determined by surface photovoltage measurement and its computer simulation
Pawel Tomkiewicz,S. Arabasz,Boguslawa Adamowicz,M. Miczek,János Mizsei,Dietrich R. T. Zahn,Hiroyuki Hasegawa,J. Szuber +7 more
TL;DR: In this article, the surface photovoltage (SPV) does not show saturation at high photon flux densities in contradiction to the simple theory of SPV, which can be explained in terms of the Dember effect.
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Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures
A. Domanowska,M. Miczek,R. Ucka,M. Matys,Boguslawa Adamowicz,J. Żywicki,Andrzej Taube,K. Korwin-Mikke,Sylwia Gieraltowska,Mariusz Sochacki +9 more
TL;DR: In this paper, the electronic and chemical properties of the interface region in the structures obtained by the passivation of epitaxial n-type 4H-SiC layers with bilayers consisting of a 5nm-thick SiO 2 or Al 2 O 3 buffer film and high- κ HfO 2 layer were investigated.
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