Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe 3 GeTe 2

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

We examine the magnetic properties of two-dimensional graphene with topological line defect using first-principles calculations and predict a weak ferromagnetic ground state with spin-polarized electrons localized along the extended line defect. Our results show that tensile strain along the zigzag direction can greatly enhance local magnetic moments and ferromagnetic stability of the system. In sharp contrast, tensile strain applied along the armchair direction quickly diminishes these magnetic moments. A detailed analysis reveals that this intriguing magnetism modulation by strain stems from the redistribution of spin-polarized electrons induced by local lattice distortion. It suggests a sensitive and effective way to control magnetic properties of graphene which is critical for its applications in nanoscale devices.

Tunable magnetism in strained graphene with topological line defect

/pdf/defect-and-impurity-properties-of-hexagonal-boron-nitride-56ri5jq2ad.pdf

Defect and Impurity Properties of Hexagonal Boron-nitride

Recent breakthroughs in two-dimensional van der Waals magnetic materials and emerging applications

Tunable band-gap of the GeC monolayer by strain and electric field: A first-principles study

The magnetic properties of Na-doped WS2 monolayer under strain are investigated by ab initio methods. Without strain, the Na-doped WS2 monolayer is a magnetic nanomaterial and the total magnetic moment is about 1.07μB. We applied strain to Na-doped WS2 monolayer from–10% to 10%. The magnetic properties are modified under different strain; the doped system gets a maximum value of at 2.01μB 10% tensile strain and a minimum value of at 0μB–10% compressive strain. The coupling between 3p states of S and 5d states of W is responsible for the strong strain effect on the magnetic properties. Our studies predict Na-doped WS2 monolayer under strain to be candidates for application in spintronics.

Magnetic properties of a Na-doped WS 2 monolayer in the presence of an isotropic strain

Impact of isotropic strain on magnetic properties of monolayer SnS2 doped with nonmagnetic metal and nonmetal atoms

Electrically tunable band gap of the 1T-MoS 2 based heterostructure: A first-principles calculation

We investigated the influence of Li and F adsorption on the ferromagnetism and magnetic anisotropy energy of CrBr3 monolayer based on the first-principles calculations It is observed that Li adsorption can dramatically enhance its ferromagnetism, and tune its easy magnetization axis to the in-plane direction from original out-of-plane The monotonic enhancement of in-plane magnetism in CrBr3 as the coverage of Li increases is attributed to electrostatic doping induced by charge transfer between Li atoms and Br atoms By contrast, the F adsorption reduces the out-of-plane magnetism in CrBr3 as the coverage of F increases, but keeps the original easy magnetization Our results may open new promising applications of CrBr3-based materials in spintronic devices

Exploitable Magnetic Anisotropy of Magnetic CrBr 3 Monolayer

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

M. Luo

Author Tools

Chat about Author