Nanoparticles (NPs) are nano-sized particles (generally 1⁻100 nm) that can be synthesized through various methods. The wide range of physicochemical characteristics of NPs permit them to have diverse biological functions. These particles are versatile and can be adopted into various applications, particularly in biomedical field. In the past five years, NPs’ roles in biomedical applications have drawn considerable attentions, and novel NPs with improved functions and reduced toxicity are continuously increasing. Extensive studies have been carried out in evaluating antibacterial potentials of NPs. The promising antibacterial effects exhibited by NPs highlight the potential of developing them into future generation of antimicrobial agents. There are various methods to synthesize NPs, and each of the method has significant implication on the biological action of NPs. Among all synthetic methods, green technology is the least toxic biological route, which is particularly suitable for biomedical applications. This mini-review provides current update on the antibacterial effects of NPs synthesized by green technology using plants. Underlying challenges in developing NPs into future antibacterials in clinics are also discussed at the present review.

Bactericidal Properties of Plants-Derived Metal and Metal Oxide Nanoparticles (NPs).

Intense white (to the eye) luminescence has been obtained by multiple implantation of Si a and C a ions into thermal SiO2 and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H‐SiC by electron diAraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H‐SiC embedded in SiO2. Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO2. ” 2000 Published by Elsevier Science B.V. All rights reserved.

Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

The photoluminescence (PL) emission of Si nanocrystals ion beam synthesized in SiO2 is studied in this work as a function of annealing time and initial Si atomic excess (super-saturation). The optical properties of this system have been correlated with the characteristics of the nanocrystal population. The Si nanocrystals show a wide and very intense PL red/infrared emission. This emission peaks at about 1.7 eV for the low super-saturation range between 1% and 10% and shifts to the infrared for higher super-saturation (20% and 30%). Remarkably, there is a linear increase of PL intensity versus super-saturation in the low range. Moreover, the annealing kinetic studies show a typical behavior of PL intensity with annealing time, with a fast transitory increase that bends over to reach asymptotic saturation. The PL intensity saturation is satisfactorily explained by the Ostwald ripening stage of the nanocrystal population while the transient stage is a consequence of both nanocrystal growth and nanocrystal surface passivation mechanisms acting together. Indeed, electron spin resonance measurements demonstrate that the concentration of Pb centers (Si dangling bonds) at the Si–SiO2 interface correlates inversely with PL intensity during most of the transient stage.

Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO2

Publisher Summary The chapter summarizes the radiation effects in quantum dot (QD) structures. It defines several radiation effects and their applications to quantum size semiconductor structures, ante omnia QDs are considered. Numerous instances are cited illustrating the main topics of interest of radiation effect studies. The QD heterostructures and QD lasers are generically more resistant to radiation damage than their bulk and two-dimensional (2D) counterparts, which is caused not only by the localization of the wavefunction of the confined carriers but also by the expulsion of the mobile defect components to the surface/interface of the nanocrystals. There are many exciting applications of particle irradiation to QD technology, such as intermixing, self-organized formation of surface nanostructures, ion beam synthesis of nanocrystals in solid matrices, as well as cluster precipitation in irradiated media. An emphasis has been given to the ion beam synthesis of magnetic nanocrystals in solid hosts.

Radiation Effects in Quantum Dot Structures

Synthesis of luminescent particles in SiO2 films by sequential Si and C ion implantation

The ion beam synthesis of group IV (SiC) and II–VI (ZnS) compound nanoparticles in SiO2 layers is studied. These systems are potentially interesting for optoelectronic applications such as electroluminescent devices emitting in the visible and UV range. The combination of structural (transmission electron microscopy, electron and X-ray diffraction), optical (infrared and raman spectroscopies, optical absorption and photoluminescence) and physico-chemical (X-ray photoelectron spectroscopy, secondary ion mass spectroscopy) techniques have been used to identify the phases formed and to correlate the optical behaviour of the layers with their microstructure. The first part is dedicated to the synthesis of luminescent SiO2 layers co-implanted with Si and C. The presence of regions with different composition in terms of C content gives rise to the formation of 3 types of nanoparticles (Si, C and SiC) leading to three intense, simultaneous and independent emission bands covering the whole visible range. A second part is dedicated to the synthesis of Mn doped ZnS nanocrystals. We have succeeded in synthesizing ZnS nanocrystals by sequential ion implantation in SiO2. The structural characterization of the annealed layers shows ZnS precipitates having a wurtzite-2H structure and with a quite narrow distribution of sizes. This population of nanocrystals is organized in two layers parallel to the free surface, as a consequence of a pure Ostwald ripening process or as a result of the implantation damage distribution. The optical analysis of samples co-implanted with Mn shows the presence of a yellow-green and intense photoluminescence corresponding to an intra- Mn2+ transition, which demonstrates the effective doping with Mn of the ZnS precipitates.

Ion beam synthesis of compound nanoparticles in SiO2

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Ion beam synthesis of compound nanoparticles in SiO2