M. Lisiansky
Tower Semiconductor Ltd.
19 Papers
92 Citations
M. Lisiansky is an academic researcher from Tower Semiconductor Ltd.. The author has contributed to research in topics: Dielectric & Non-volatile memory. The author has an hindex of 8, co-authored 19 publications.
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Papers
Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals
Vissarion Mikhelashvili,Boris Meyler,S. Yofis,Y. Shneider,A. Zeidler,Magnus Garbrecht,T. Cohen-Hyams,Wayne D. Kaplan,M. Lisiansky,Y. Roizin,J. Salzman,Gadi Eisenstein +11 more
TL;DR: In this paper, a low voltage nonvolatile memory field effect transistor comprising thermal SiO2 tunneling and HfO2 blocking layers as the gate dielectric stack and Au nanocrystals as charge storage nodes was demonstrated.
31
Patent
High-K Dielectric Stack And Method Of Fabricating Same
M. Lisiansky,Yakov Roizin,Alexey Heiman,Amos Fenigstein +3 more
- 14 Jan 2008
TL;DR: In this article, the authors proposed a method for improving the reliability of a high-k dielectric layer or stack by formulating an amorphous highk layer over an insulating layer, doping it with nitrogen atoms, and subsequently heating the resulting structure at a temperature greater than or equal to the crystallization temperature of the high k layer.
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Radiation Tolerance of NROM Embedded Products
M. Lisiansky,Gil Cassuto,Yakov Roizin,D. Corso,Sebania Libertino,Antonio Marino,Salvatore Lombardo,Isodiana Crupi,Calogero Pace,Felice Crupi,David Fuks,Arik Kiv,Ernesto della Sala,Giuseppe Capuano,Felix Palumbo +14 more
TL;DR: In this paper, the authors demonstrated the radiation tolerance of NROM memories at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments.
16
Ionizing Radiation Effects on Non Volatile Read Only Memory Cells
Sebania Libertino,D. Corso,M. Lisiansky,Yakov Roizin,Felix Palumbo,Fabio Principato,Calogero Pace,Paolo Finocchiaro,Salvatore Lombardo +8 more
TL;DR: In this paper, the authors studied the threshold voltage and drain-source current (IDS) behavior of nitride read-only memories (NROM) both in situ during irradiation or after irradiation with photons and ions.
13
Patent
Method for fabricating capacitor structures using the first contact metal
Efraim Aloni,Yakov Roizin,Alexey Heiman,M. Lisiansky,Amos Fenigstein,Myriam Buchbinder +5 more
- 19 Mar 2008
TL;DR: In this article, a capacitor structure is fabricated with only slight modifications to a conventional single-poly CMOS process, and a dielectric layer is formed over the exposed polysilicon structures, which may be salicided or non-salicided.
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