M. Liberati
Montana State University
17 Papers
44 Citations
M. Liberati is an academic researcher from Montana State University. The author has contributed to research in topics: Thin film & Magnetization. The author has an hindex of 12, co-authored 17 publications. Previous affiliations of M. Liberati include Lawrence Berkeley National Laboratory.
Chat about Author
Papers
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN.
A. Schmehl,A. Schmehl,Venu Vaithyanathan,Alexander Herrnberger,Stefan Thiel,Christoph Richter,M. Liberati,Tassilo Heeg,Martin Röckerath,Lena F. Kourkoutis,Sebastian Mühlbauer,Peter Böni,David A. Muller,Yuri Barash,Jürgen Schubert,Yves Idzerda,Jochen Mannhart,Darrell G. Schlom +17 more
TL;DR: EuO is established as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties.
303
Creation of an antiferromagnetic exchange spring.
TL;DR: In this article, the existence of a planar antiferromagnetic domain wall is proven by a measurement on a single crystal Co/NiO(001) using X-ray magnetic linear dichroism spectroscopy.
Determining exchange splitting in a magnetic semiconductor by spin-filter tunneling.
Tiffany S. Santos,Jagadeesh S. Moodera,Karthik V. Raman,Ezana Negusse,J. Holroyd,J. Dvorak,M. Liberati,Yves Idzerda,Elke Arenholz +8 more
TL;DR: In this article, Schiller et al. determined a large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO by fitting the currentvoltage characteristics and temperature dependence to tunneling theory.
153
Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain
TL;DR: In this paper, a comparison of (001) thin films on each substrate indicates that strained films have consistently higher saturated moments than corresponding relaxed films, which exhibit bulk moments, indicating the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.
Stress relaxation of La1/2Sr1/2MnO3 and La2/3Ca1/3MnO3 at solid oxide fuel cell interfaces
A. Lussier,J. Dvorak,Shane Stadler,J. Holroyd,M. Liberati,M. Liberati,Elke Arenholz,S. B. Ogale,Tom Wu,Thirumalai Venkatesan,Yves Idzerda +10 more
TL;DR: In this paper, in-plane biaxial stress modifies the electronic structure of La2/3Ca1/3MnO3 and La1/2Sr 1/2Mn O3 thin films.
38