This paper presents an overview of the physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology. The ability to simultaneously achieve high cutoff frequency (f/sub T/), low base resistance (r/sub b/), and high current gain (/spl beta/) using Si processing underlies the low levels of low-frequency 1/f noise, RF noise, and phase noise of SiGe HBTs. We first examine the RF noise sources in SiGe HBTs and the RF noise parameters as a function of SiGe profile design, transistor biasing, sizing, and operating frequency, and then show a low-noise amplifier design example to bridge the gap between device and circuit level understandings. We then examine the low-frequency noise in SiGe HBTs and develop a methodology to determine the highest tolerable low-frequency 1/f noise for a given RF application. The upconversion of 1/f noise, base resistance thermal noise, and shot noises to phase noise is examined using circuit simulations, which show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1/f corner frequency measured under dc biasing. The implications of SiGe profile design, transistor sizing, biasing, and technology scaling are examined for all three types of noises.

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

The base transit time of Si/SiGe heterojunction bipolar transistor is analyzed including the effects of minority carrier recombination lifetime and velocity saturation. The reduction of recombination lifetime in the neutral base region increases the base transit time as compared to the infinite recombination lifetime, and the finite saturation velocity also degrades the base transit time, as compared to the infinite saturation velocity. This analytical analysis can obtain the optimum design of Ge profiles in the base to minimize the base transit time. The extremely heavy doping of the base can degrade the base transit time significantly if the base width is larger than the diffusion length.

Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation

A 25 GHz ring VCO is fabricated in a 0.12/spl mu/m SiGe BiCMOS process. The VCO with a 3.3V supply consumes 32mA. The measured phase noise is -105dBc/Hz at 10MHz offset from the center frequency of 24.3 GHz. Design optimization techniques for high performance ring oscillators in a 0.12 /spl mu/m SiGe HBT technology are discussed.

A 25 GHz quadrature voltage controlled ring oscillator in 0.12/spl mu/m SiGe HBT

/pdf/development-of-broadband-noise-models-and-radio-frequency-4ydyicqnol.pdf

Development of Broadband Noise Models and Radio Frequency Integrated Circuits using Silicon Germanium HBTs

The article presents a synthesis technique for a symmetrically coupled multiconductor microstrip line operating in normal modes and looks at the examples of the synthesis of a ten-conductor symmetrically coupled multiconductor microstrip line operating in even- and odd normal modes. The paper investigates the dependences of the parameters of the introduced lines.

/pdf/synthesis-of-multiconductor-microstrip-lines-operating-in-3828ttz8dx.pdf

Synthesis of Multiconductor Microstrip Lines Operating in Normal Modes

a Manufacturable Technology

http://ieeexplore.ieee.org/iel5/16/30901/01433121.pdf

Simulation and Properties of the Shielded Twined Helical Deflecting System

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

M. Khater

Author Tools

Chat about Author

Papers

a Manufacturable Technology

Simulation and Properties of the Shielded Twined Helical Deflecting System