A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.

Method for producing a semiconductor device

Dans le contexte de la protection peripherique des composants de puissance en GaN, nous avons explore une voie originale pour realiser l'homo-epitaxie localisee de GaN de type p, reposant sur une approche Vapeur-Liquide-Solide (VLS). Le cycle de croissance comprend 3 etapes successives. Dans un premier temps, du Ga est depose par MOCVD, formant un reseau de gouttelettes de diametres submicrometriques. Puis, du Mg est incorpore aux gouttelettes a partir de la phase gazeuse, en utilisant le precurseur (MeCP)2Mg. Enfin, les gouttelettes de Ga-Mg sont nitrurees a 500-700°C sous un flux de NH3 dilue dans un gaz porteur. A l'issue d'un cycle complet de croissance, on obtient systematiquement un reseau de plots et/ou d'anneaux de GaN, bien separes. L'augmentation de la teneur en Mg dans les gouttes favorise un mecanisme de croissance purement VLS, a l'interface Liq/Sol (formation de plots), plutot qu'une croissance le long de la ligne triple (formation d'anneaux). Ces structures de GaN presentent un caractere homo-epitaxial, mais une plus forte defectuosite que leur germe. En utilisant une approche multi-cycles, nous avons pu elaborer des films de GaN:Mg presentant des concentrations en Mg tres elevees, controlables entre 3.1019 cm-3 et 8.1021 cm-3. Cependant, de fortes concentrations en impuretes C, H et O ont egalement ete detectees dans ces films. Diverses voies ont ete explorees, sans succes, pour tenter de reduire la contamination en O, d'un niveau redhibitoire pour l'obtention d'un dopage de type p. En pratique, les films de GaN:Mg obtenus apparaissent tres conducteurs de type n, pour des dopages au Mg moderes, et semi-isolants aux plus forts dopages. Differents materiaux de masques ont ete testes en vue de localiser la croissance

Croissance homo-épitaxiale VLS et étude du dopage au magnésium de GaN pour la protection périphérique de composants de puissance

Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

In situ etching at InGaAs/GaAs quantum well interfaces

Gallium nitride films were grown on (0001) sapphire substrates by chemical beam epitaxy (CBE) using triethylgallium (TEGa) and ammonia (NH 3 ) precursors. Prior to the GaN epilayer growth at 850°C, a thin GaN buffer layer was deposited at 560°C. Structural and optical properties of the epilayers were investigated as a function of the anneal treatment of the buffer layer. Annealing of the buffer in NH 3 up to 900°C increases the roughness of the surface, resulting in a epilayer with higher crystallinity. Heating the buffer to 900°C results in partial desorption of the film leaving small grains on an exposed substrate. While the epitaxy on this thin buffer is two-dimensional the resulting surface consists of a hexagonal tile-structure. The level of unintentional carbon doping is high in all films, although the growth conditions need further optimization. CBE may become a promising candidate for the growth of nitride films only if the carbon incorporation is not an inherent problem of the technique.

Chemical beam epitaxy of GaN on (0001) sapphire substrate

Kinetics of AsCl3 chemical beam etching of GaAs(0 0 1), (1 1 1)A and (1 1 1)B surfaces

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Chemical beam epitaxy of GaN on (0001) sapphire substrate

Kinetics of AsCl3 chemical beam etching of GaAs(0 0 1), (1 1 1)A and (1 1 1)B surfaces