This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

Electrostatic remote plasma source

Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.

Systems and methods for calibrating a switched mode ion energy distribution system

Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

System, method and apparatus for controlling ion energy distribution

An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack formed of hydrogenated silicon layers and lower-refractive index layers stacked in alternation. The hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm.

Optical filter and sensor system

Methods for depositing metal oxide layers on metal surfaces are described The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol These methods do not oxidize the underlying metal layer

Methods For ALD Of Metal Oxides On Metal Surfaces

Hydrogenated silicon nitride (SiN:H) is prized for its ability to anti-reflect incident sun light on crystalline silicon and provide defect passivating hydrogen. An innovative new plasma source, the Plasma Beam Source™ (PBS™) [1] is used to deposit these SiN:H thin films to meet - and exceed - the throughput and quality requirements of this application. This new PECVD technology is capable of depositing SiN:H thin films at rates in excess of 150 nm-m/min with an optical index that is controlled between 1.75 and 2.4. The advantages of this new PECVD technology for solar cell fabrication include exceptional deposition rates, high precursor utilization, dense high quality films with extended production campaigns. In this paper we discuss the results of our process development for hydrogenated silicon nitride thin films. We present bond densities, refractive index, extinction coefficients and hydrogen concentration of deposited films.

Silicon nitride ARC thin films by new plasma enhanced chemical vapor deposition source technology

In this article, the authors discuss the latest results of our development of large area plasma enhanced chemical vapor deposition (PECVD) source technologies for flexible substrates. A significant challenge is the economical application of thin films for use as vapor barriers, transparent conductive oxides, and optical interference thin films. Here at General Plasma the authors have developed two innovative PECVD source technologies that provide an economical alternative to low temperature sputtering technologies and enable some thin film materials not accessible by sputtering. The Penning Discharge Plasma (PDP™) source is designed for high rate direct PECVD deposition on insulating, temperature sensitive web [J. Modocks, Proceedings of the Society of Vacuum Coaters, 2003 (unpublished), p. 187]. This technology has been utilized to deposit SiO2 and SiC:H for barrier applications [V. Shamamian et al. Proceedings of the Flexible Displays and Manufacturing Conferrence, 2006 (unpublished)]. The Plasma Beam S...

Latest innovations in large area web coating technology via plasma enhanced chemical vapor deposition source technology

Transparent conducting oxide (TCO) thin film is one of the key components in photovoltaic and display devices. Indium tin oxide (ITO) is the best known TCO material; however, its cost is high. Fluorinated tin oxide is one candidate to replace ITO as a TCO material. It is stable at high temperature, economical to produce and more benign compared to other TCO materials. The bulk resistivity of tin oxide deposited with conventional methods (PECVD, spray pyrolysis and atmospheric pressure CVD) reach as low as 5 × 10−4 Ohm-cm. However, the deposition temperature is typically above 350 °C and not suitable for temperature sensitive processes such as CIGS, CdTe, a-Si and quantum dot based solar cells or large area plastic substrates. We have developed plasma CVD (PCVD) process to deposit fluorinated tin oxide at low temperature (≪ 250 °C). The fluorinated tin oxide bulk resistivity deposited at 250 °C and 200 °C are 9.0 × 10−4 Ohm-cm and 1.2 × 10−3 Ohm-cm respectively. The film transmittance at a 10 Ohm/sq sheet resistance is greater than 94% at 500 nm. In this presentation, we will discuss correlations between electrical properties and microstructure as well as stability of the deposited films. We will also discuss the economical impact of PCVD fluorinated tin oxide films compared to other TCO materials.

Low temperature plasma chemical vapor deposition (PCVD) of fluorinated tin-oxide transparent conducting oxide

A magnetically enhanced remote plasma source is applied to deposit AlO x thin films for crystalline solar cell passivation. High deposition rate and stable high surface charge density are reported. Significant lifetime increase is reported for both backside passivation on p-type solar cell and front side passivation on n-type solar cell. With its unique linear architecture, this technology could be the next enabler for AlO x passivation in solar cell manufacturing.

N-type and P-type C-SI surface passivation by remote PECVD AlO x for solar cells

A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues.

Deposition of thin films on energy sensitive surfaces

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