Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

/pdf/luminescence-properties-of-defects-in-gan-4hjs241x7f.pdf

Luminescence properties of defects in GaN

One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, position-controlled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

/pdf/one-dimensional-zno-nanostructures-solution-growth-and-30xs4d6be7.pdf

One-dimensional ZnO nanostructures: Solution growth and functional properties

Silicon-based oxynitride and nitride phosphors for white LEDs—A review

Recent developments in rare-earth doped materials for optoelectronics

The Blue Laser Diode

Blue emission has been obtained at room temperature from Tm-doped GaN electroluminescent devices. The GaN was grown by molecular beam epitaxy on Si(111) substrates using solid sources (for Ga and Tm) and a plasma source for N2. Indium–tin–oxide was deposited on the GaN layer and patterned to provide both the bias (small area) and ground (large area) transparent electrodes. Strong blue light emission under the bias electrode was observable with the naked eye at room temperature. The visible emission spectrum consists of a main contribution in the blue region at 477 nm corresponding to the Tm transition from the 1G4 to the 3H6 ground state. A strong near-infrared peak was also observed at 802 nm. The relative blue emission efficiency was found to increase linearly with bias voltage and current beyond certain turn-on levels.

http://www.nanolab.uc.edu/Publications/PDFfiles/236.pdf

Blue emission from Tm-doped GaN electroluminescent devices

Visible light emission has been obtained at room temperature by photoluminescence (PL) and electroluminescence (EL) from Pr-doped GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Pr) and a plasma gas source for N2. Photoexcitation with a He–Cd laser results in strong red emission at 648 and 650 nm, corresponding to the transition between 3P0 and 3F2 states in Pr3+. The full width at half maximum (FWHM) of the PL lines is ∼1.2 nm, which corresponds to ∼3.6 meV. Emission is also measured at near-infrared wavelengths, corresponding to lower energy transitions. Ar laser pumping at 488 nm also resulted in red emission, but with much lower intensity. Indium-tin-oxide Schottky contacts were used to demonstrate visible red EL from the GaN:Pr. The FWHM of the EL emission line is ∼7 nm.

/pdf/red-light-emission-by-photoluminescence-and-v12am65460.pdf

Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates

Rare earth (RE) doping of GaN has led to a new full color thin film electroluminescent (TFEL) phosphor system. GaN films doped with Eu, Er, and Tm dopants emit pure red, green, and blue emission colors, respectively. As a host for RE luminescent centers, GaN possesses many properties which are ideal for bright multiple color TFEL. Specifically, GaN has excellent high field transport characteristics, is chemically and thermally rugged, and incorporates well the RE dopants. X-ray absorption measurements have shown that even at RE dopant levels exceeding 0.1 at.% the majority of RE dopants occupy a strongly bonded substitutional site on the Ga sublattice. According to RE crystal field theory this tetrahedrally bonded site allows optical activation and emission from RE 4f‐4f inner-shell electronic transitions. Monte Carlo calculations of GaN carrier transport have shown that at 2M V cm 1 applied field the average electron possesses 2.6 eV energy which is adequate for exciting blue emission. GaN:Er TFEL devices have exhibited a brightness of 500‐1000 cd:m 2 at 540 nm. In addition to pure colors, mixed colors can be achieved by doping with a combination of REs. For example, co-doping with Er and Tm results in an emission spectrum which is perceived by the human eye as a blue‐green (turquoise) hue. Multiple color capability in a single device has also been demonstrated by adjusting the bias voltage (in a co-doped GaN:Er,Eu layer) or by switching the bias polarity (in a stacked two layer GaN:Er:GaN:Eu structure). The combination of pure or mixed color emission, the availability of bias controlled color, and the potential for white light emission indicate that GaN:RE TFEL devices have enormous potential for display applications. © 2001 Elsevier Science B.V. All rights reserved.

/pdf/multiple-color-capability-from-rare-earth-doped-gallium-1rmwdm1txr.pdf

Multiple color capability from rare earth-doped gallium nitride

Visible lightelectroluminescence(EL) has been obtained from Er-doped GaN Schottky barrierdiodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga, and Er) and a plasma source for N 2 . Al was utilized for both the Schottky (small-area) and ground (large-area) electrodes. Strong green light emission was observed under reverse bias, with weaker emission present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413 and at 666/672 nm. The green emission lines have been identified as Er transitions from the 2 H 11/2 and 4 S 3/2 levels to the 4 I 15/2 ground state and the blue and red peaks as the 2 H 9/2 and 4 F 9/2 Er transitions to the same ground state. The reverse bias EL intensity was found to increase linearly with bias current.

/pdf/green-electroluminescence-from-er-doped-gan-schottky-barrier-3zl8jakd1v.pdf

Green electroluminescence from Er-doped GaN Schottky barrier diodes

Visible and infrared rare-earth-activated electroluminescence (EL) has been obtained from Schottky barrier diodes consisting of indium tin oxide (ITO) contacts on an Er-doped GaN layer grown on Si. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources for Ga, Mg, and Er and a plasma source for N2. RF-sputtered ITO was used for both diode electrodes. The EL spectrum shows two peaks at 537 and 558 nm along with several peaks clustered around 1550 nm. These emission lines correspond to atomic Er transitions to the 4I15/2 ground level and have narrow linewidths. The optical power varies linearly with reverse bias current. The external quantum and power efficiencies of GaN:Er visible light-emitting diodes have been measured, with values of 0.026% and 0.001%, respectively. Significantly higher performance is expected from improvements in the growth process, device design, and packaging.

/pdf/visible-and-infrared-rare-earth-activated-2ngis8vc3b.pdf

Visible and infrared rare-earth-activated electroluminescence from indium tin oxide schottky diodes to gan:er on si

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