This paper reports an investigation of the !f.egative-!},.ias lemperature Instability (NET!) stress in 0.3 J.lm p+ -poly PMOSFETs with gate oxides grown on !f.itrogen Implanted §J §.ubstrates (N!SS) in comparison with traditional control Si02 with identical oxide thickness of 36 A. Our results . indicate that N!SS oxides have stronger endurance to NET! degradation than control oxides.

http://ieeexplore.ieee.org/iel5/10058/32252/01503546.pdf

Study of NBTI Stress in P+-Poly PMOSFETs with Gate Oxides Grown on Nitrogen Implanted Si Substrates

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Study of NBTI Stress in P+-Poly PMOSFETs with Gate Oxides Grown on Nitrogen Implanted Si Substrates