This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in common-emitter configuration. The presented amplifier stage can achieve sub-1 dB NF performance with ~10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors’ knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.

Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications

Multi-nodal spectrum sensing is a promising approach to robust cognitive radio networks, which provides increased adaptability to database-anchored sharing approaches. Yet its commercially viable implementation requires compact, low-cost, flexible sensing receivers. This paper describes an implementation approach relying on a fully differential 0.25 µm SiGe:C BiCMOS low-noise down-converter RFIC in the front-end, which covers 0.3–6 GHz. Its quadrature outputs are processed in a commercially available baseband processor that combines dual channel 14-bit, 250 MS/s analog to digital converters (ADC) with a Virtex 6 FPGA. The design and implementation status of the system will be described, as well as its validation under realistic noise and interference conditions, sensing white spaces in the UHF TV band.

/pdf/towards-a-highly-flexible-spectrum-sensing-platform-for-67i86077im.pdf

Towards a highly flexible spectrum sensing platform for cognitive radio networks

Cognitive radio radio networks employing distributed spectrum sensing techniques will need inexpensive, highly compact spectrum sensing front-ends. This paper presents a highly compact approach utilizing three custom radio-frequency integrated circuits realized in a 0.25 µm Si/SiGe:C BiCMOS technology, replacing a larger number of off-the-shelf components more commonly used. It provides more than 24 dB gain and achieves an IIP 3 of −9 dBm. An overall bandwidth of 2 GHz can be sensed in segments of up to 200 MHz. In combination with a Virtex 6 FPGA, reliable spectrum sensing in different realistic scenarios is finally demonstrated.

Highly flexible cognitive radio spectrum sensing front-end

In this paper, a highly compact wideband fully integrated, fully differential low noise amplifier, using a 0.25 μm SiGe BiCMOS technology, is presented. The IC is based on a cascode topology using resistive feedback in order to achieve the targeted bandwidth. Because of the selected topology, the circuit has a die size of only 330 μm×370 μm. The LNA achieves a gain exceeding 15 dB up to 15 GHz and has an input and output matching below −10 dB over the whole operation bandwidth. The input referred 1-dB compression point is −18.5 dBm at 5 GHz and the measured input third order intercept point is −7 dBm. The simulated noise figure is between 1.8 dB at 3 GHz and 2.5 dB at 12 GHz. The LNA consumes 28 mA at a supply voltage level of 5 V. This amplifier is intended for future implementation in highly integrated digital beam-forming receivers operating at L-, S-, C- or X-band.

https://ieeexplore.ieee.org/iel5/6089237/6102757/06102841.pdf

Compact wideband differential SiGe BiCMOS low noise amplifier for application in digital beam-forming receivers

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Compact wideband differential SiGe BiCMOS low noise amplifier for application in digital beam-forming receivers