The synthesis of Ti 3 SiC 2 by pressureless reactive sintering of Ti/SiC/C mixtures under an Ar atmosphere has been studied using in situ neutron diffraction. The intermediate phases TiC x and Ti 5 Si 3 C x (x≤1) form first at ∼800-1400°C. These phases are consumed in the formation of Ti 3 SiC 2 , at ∼1500°C. After sintering, Ti 5 Si 3 C x disappears but an amount of TiC x remains in the sample primarily as a surface layer. The studies appear to support a suggestion that the intermediate phases react to form Ti 3 SiC 2 through a diffusion-controlled process. Prolonged stepwise heating under argon in some experiments resulted in decomposition of Ti 3 SiC 2 above ∼1400°C and significant disproportionation of the sample.

In Situ Neutron Powder Diffraction Study of Ti3SiC2 Synthesis

Annealing a titanium-rich carbide film deposited on silicon produces, in a single processing step, both a stable titanium silicide contact and a titanium carbide diffusion barrier between the silicide and a subsequently formed overlying layer of aluminum. Reliable low-resistance contacts to VLSI devices are thereby provided in a cost-effective fabrication sequence. Other metallization systems, comprising a silicide and a diffusion barrier to aluminum formed in a single processing step, are also described.

Forming low-resistance contact to silicon

Titanium silicon carbide (Ti3SiC2) and Ti3SiC2-based composite powders were synthesized by isothermal treatment in an inert atmosphere as a function of initial compositions (mixtures). A high content of TiC was obtained in the final product when the initial mixtures contained free carbon. The use of TiC as a reagent was unsuccessful in obtaining Ti3SiC2. High Ti3SiC2 conversion was found for the initial mixtures containing SiC as the main source for silicon and carbon. An initial mixture with a large excess of silicon, 3Ti/1.5SiC/0.5C, was needed to obtain high-purity Ti3SiC2. A reaction mechanism, where Ti3SiC2 nucleates on Ti5Si3C crystals and grows by long-range diffusion of Ti and C, is proposed. The reaction mechanism was proposed to be based on silicon loss during the formation of Ti3SiC2.

Synthesis of Ti3SiC2 Powders: Reaction Mechanism

The low resistivity and refractory nature of titanium carbide makes it potentially useful as a diffusion barrier in thin film metallization schemes. In the present investigation, deposition and properties of thin titanium carbide films have been investigated. The films were deposited by reactive radio frequency sputtering in methane–argon mixtures on a variety of substrates. The effects of methane to argon ratio, total sputtering pressure, and power on the film deposition rate, composition and properties were determined. There were interactive effects of these parameters on the composition and properties of these films. Resistivity increased with carbon content; for Ti/C≥1 it was ∼200 μΩ cm. Stress that was compressive was maximum in the nearly stoichiometric TiC film. Grain size was small in all films, especially so in carbon rich films. All stoichiometric titanium carbide films were resistant to HF solutions. Films with TiC/≥1 dissolved easily in ethylene dinitrilo tetra acetric acid (EDTA) solution.

Reactively sputtered titanium carbide thin films: Preparation and properties

Molybdenum oxide (Mo1-x
 O
 x
 ) and ruthenium oxide (RuO2) films were prepared by rf reactive sputtering of Mo or Ru targets in an O2/Ar plasma. Both films exhibit metallic conductivities. The influence of the deposition parameters on the phase that forms and on the microstructure of Mo1-x
 O
 x
 and RuO2 films is reported. A phase transformation is observed in Mo1-x
 O
 x
 films subjected to heat treatment. The diffusion barrier performance of Mo1-x
 O
 x
 and RuO2 layers interposed between Al and Si is compared.

Microstructure of reactively sputtered oxide diffusion barriers

The interactions of reactively sputtered titanium carbide (TixC) films with Si, SiO2, Ti, TiSi2, and Al have been studied using Auger electron spectroscopy, x‐ray diffraction, and four‐point probe resistance. The TixC films react with Si leading to silicide phases that are not observed when pure Ti reacts with Si. The interaction of TixC with Si is delayed to higher temperatures with increasing carbon content. For x≤1, no interaction is observed even after 900 °C‐30 min anneal. For x≥1, the silicide formation leads to phase separation with TiSi2 near the silicon substrate plus an outer titanium carbide layer, which, like all other TixC films investigated, is found to be an effective diffusion barrier to Al penetration up to 500 °C. For x≤1, no interaction with SiO2 is observed up to 900 °C. However, Ti‐rich films interact with SiO2 to form titanium oxide. The stoichiometric film adheres to Ti and TiSi2 much better than to Si and SiO2. It does not react with Ti or TiSi2 up to 750 °C. At 900 °C TiC is unsta...

Interaction of reactively sputtered titanium carbide thin films with Si, SiO2Ti, TiSi2, and Al

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

M. Eizenberg

Author Tools

Chat about Author

Papers

Interaction of reactively sputtered titanium carbide thin films with Si, SiO2Ti, TiSi2, and Al