The Shockley–Ramo theorem is reviewed based on the conservation of energy. This review shows how the energy is transferred from the bias supplies to the moving charge within a device. In addition, the discussion extends the original theorem to include cases in which a constant magnetic field is present, as well as when the device medium is heterogeneous. The rapid development of single polarity charge sensing techniques implemented in recent years on semiconductor γ-ray detectors are summarized, and a fundamental interpretation of these techniques based on the Shockley–Ramo theorem is presented.

/pdf/review-of-the-shockley-ramo-theorem-and-its-application-in-1xqbmy5vmk.pdf

Review of the Shockley–Ramo theorem and its application in semiconductor gamma-ray detectors

Digital Signal Processing Methods for Pixelated 3-D Position Sensitive Room-Temperature Semiconductor Detectors by Yuefeng Zhu

Digital Signal Processing Methods for Pixelated 3-D Position Sensitive Room-Temperature Semiconductor Detectors

Polymer flip chip bonding has been used to package a multi-electrode CZT detector. During the packaging process the temperature of all components was kept less than 80°C. The size of the conductive epoxy eontacts is less than 120 μm in diameter. Thermal cycling, and random and structural vibration tests indicate reliable detector–substrate interconnection and rugged construction.

/pdf/multi-electrode-czt-detector-packaging-using-polymer-flip-20a4i0h3vo.pdf

Multi-electrode CZT detector packaging using polymer flip chip bonding

We report on recent three-dimensional imaging performance and detection efficiency measurements obtained with 5 mm thick prototype CdZnTe detectors fabricated with orthogonal coplanar anode strips. In previous work, we have shown that detectors fabricated using this design achieve both very good energy resolution and sub-millimeter spatial resolution with fewer electronic channels than are required for pixel detectors. As electron-only devices, like pixel detectors, coplanar anode strip detectors can be fabricated in the thickness required to be effective imagers for photons with energies in excess of 500 keV. Unlike conventional double-sided strip detectors, the coplanar anode strip detectors require segmented contacts and signal processing electronics on only one surface. The signals can be processed to measure the total energy deposit and the photon interaction location in three dimensions. The measurements reported here provide a quantitative assessment of the detection capabilities of orthogonal coplanar anode strip detectors.

/pdf/three-dimensional-imaging-and-detection-efficiency-49j8mfzabw.pdf

Three-dimensional imaging and detection efficiency performance of orthogonal coplanar CZT strip detectors

Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments.

/pdf/noise-in-cdznte-detectors-48xg5ynuh7.pdf

Noise in CdZnTe detectors

A novel electrode configuration for CZT imaging devices is presented. It is made of focusing, non-collecting anode strips, in one dimension, and collecting anode pixels, interconnected in rows, in the orthogonal dimension. The simulation of such an imaging detector is presented. First, field lines in the detector are computed that show that electrons generated in γ-ray events are collected on the pixels. Charge signals, induced on the pixel and on the strip by drifting electrons, are calculated for several points of interaction inside the detector unit cell. These show that this new detector should retain the spectroscopic and detection efficiency advantages of single carrier (electrons) charge sensing devices such as pixel detectors or spectrometers with controlling electrodes. Furthermore, it retains the main advantage of conventional strip detectors, i.e. an N x N array of imaging pixels realized with only 2N electronic channels. An additional potential advantage is the measurement of the third coordinate, i.e. the depth of interaction in the detector.

An imaging CdZnTe detector with coplanar orthogonal anode strips

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An imaging CdZnTe detector with coplanar orthogonal anode strips