Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure cobalt target (or nozzle) in reactive atmosphere and post-annealed on air. Properties of deposited layers have been studied and discussed with respect to their potential applications. The surface morphology of the films was analyzed by SEM, their crystalline structure by XRD and Raman spectroscopy, chemical composition by EDS, electrical properties by Van der Pauw method and the specific surface area was measured by standard BET analysis. The layers prepared by the hollow cathode discharge compared to the magnetron-prepared films exhibited higher porosity, higher resistivity, higher activation energy, and higher deposition rate during the sputtering process.

Co3O4 thin films prepared by hollow cathode discharge

We report on the effect of over∼underestimation of the plasma potential by the strongly emitting probe technique in the low temperature plasma due to the effect of the space charge of the emitted electrons; experimental data are compared with theoretical model. Further we studied the electron saturation current variations at varying probe heating and we found them to be closely related to the probe wire contamination. The study was performed in two types of low temeperature argon plasma—weakly magnetized plasma of the cylindrical magnetron and the hollow cathode plasma jet showing different trends.

Emissive probe diagnostics in low temperature plasma—effect of the space charge and variations of the electron saturation current

The RF modulated plasma jet system was investigated during the deposition of Pb(Zr x Ti 1− x )O 3 (PZT) thin films on polymer substrates. PZT films were deposited simultaneously on Si and polymer substrates with Pt layer. The time resolved system with RF compensated Langmuir probe was used for measurement of the evolution of the plasma jet parameters in the location of the substrate during the modulation cycle. Analysis of deposited PZT films has shown that stoichiometry was dependent on energy of ions bombarding the substrate.

Investigation of the RF pulse modulated plasma jet system during the deposition of Pb(ZrxTi1−x)O3 thin films on polymer substrates

High quality hydrogenated amorphous silicon (a-Si:H), germanium (a-Ge:H) and silicon–germanium (a-SiGe:H) thin films have been deposited by means of a d.c. hollow cathode system with magnetic field confinement. High purity single-crystal silicon and germanium nozzles were reactively sputtered in a high-density hollow cathode discharge of argon and hydrogen. This process avoids the use of the toxic and pyrophoric gases, germane and silane. The amorphous silicon thin films had light to dark conductivity ratios >10 6 with light conductivity in the 10 −5 S/cm range. The best a-Si:H films have a Tauc band gap near 1.8 eV with an atomic hydrogen concentration of approximately 14%. The growth rate was in the 2–3 μm/h range. For the a-Ge:H films the FTIR results indicate that these films have hydrogen bonding as a single atom, as did the hydrogenated silicon films. The Tauc bandgap was approximately 1.0 eV for all the germanium films. A slight photoresponse was noted for these films, which were deposited at a rate of from 2 to 6 μm/h. For the a-SiGe:H films, two hollow cathodes of single crystal Si and Ge are reactively sputtered simultaneously. A description of the complete system will be presented. The optical and electronic properties of the initial films are promising. The photoresponse is dependent upon the bandgap, i.e. the germanium content, as expected. A light to dark ratio of 2600 has been achieved for a film with a bandgap of 1.53 eV. The FTIR data indicates that SiH bonds dominate over Ge:H bonds by the absence of peaks at 570 and 1880 cm −1 .

Deposition of high quality amorphous silicon, germanium and silicon-germanium thin films by a hollow cathode reactive sputtering system

We report on the operation and characteristics of radio frequency (RF) plasma beam sources based on the expansion of the discharge outside of limited spaces with small interelectrode gaps. The appropriate electrode configuration, combined with high mass flow values and appropriate power levels, leads to small- or large-size plasma jets, working stably at low, intermediate, and atmospheric pressures. The sources are promising tools for a wide range of applications in thin film deposition, surface modification, and cleaning, including the case of temperature-sensitive substrates.

/pdf/radio-frequency-expanding-plasmas-at-low-intermediate-and-17bavdhooh.pdf

Radio frequency expanding plasmas at low, intermediate, and atmospheric pressure and their applications

RF and DC plasma jet sputtering systems were investigated as sources for deposition of ZnO thin films. Deposited zone films have a strong orientation of hexagonal crystallites with the ‘ c ’ axis perpendicular to the substrate surface. Temperature of the substrate did not exceed 150 °C during the deposition. Langmuir probe measurement performed at the substrate revealed two groups of electrons with different temperatures in the DC plasma jet. A single group of electrons was found in the RF plasma jet system. Electron concentration in the RF jet was found to be about n eRF ≈5×10 9 –10 10 cm −3 with temperature T eRF ≈2.5–3.5 eV. In the DC plasma jet, concentration of cold electrons was usually n ec ≈10 9 cm −3 with temperature T ec ≈0.5 eV and concentration of hot electrons was n eh ≈10 8 cm −3 with temperature T eh ≈2–3.5 eV. Photographs also confirmed that the plasma density is higher in the position of the substrate in the RF jet than in the DC jet. Other obtained macroscopic parameters as plasma potential and floating potential relative to the grounded reactor are presented.

Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films

A plasma-chemical reactor with a multi-plasma-jet RF hollow-cathode system has been developed for the deposition of alloy and composite thin films. Two primary plasma-jet channels and one secondary plasma channel were created in the volume of the reactor. High-density plasma flowing in these plasma-jet channels is generated inside the nozzles. These work simultaneously as RF hollow cathodes. An RF hollow cathode discharge is generated in these nozzles and is subsequently blown out of the reactor, creating flowing plasma jets. These jets were used for the deposition of SiGe and ZrCN thin films as an example of the deposition of alloy and composite thin films with this system. Co-sputtering or reactive co-sputtering of the nozzle material using high-density RF hollow-cathode plasma was applied for the deposition process. Control of the composition of the thin films was accomplished by setting the relative distance between the nozzle outlets without changing the plasma density inside the RF hollow cathodes. The composition of films was investigated with an electron microprobe system equipped with an X-ray microanalyser. This apparatus allowed quantitative analysis of the films. The stoichiometric homogeneity of the films was studied with this technique. Optical emission spectroscopy was used to investigate the secondary plasma-jet channel.

Low-pressure RF multi-plasma-jet system for deposition of alloy and composite thin films

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Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films

Low-pressure RF multi-plasma-jet system for deposition of alloy and composite thin films