In this paper, we propose a compact neuromorphic system that can work with four-terminal Si-based synaptic devices for spiking neural networks. The system consists of Si-based floating-body synaptic transistors and integrate-and-fire neuron circuit. The synaptic device can change its weight using floating-body effect and charge injection into the floating gate. The neuron circuit integrates signals from the synaptic devices through current mirrors and generates an action-potential when the integrated signal value exceeds a threshold value. The generated action potential that is transmitted to postsynaptic neurons is simultaneously returned to the back gate of the synaptic device for the change of weight based on spike-timing-dependent-plasticity. As the four-terminal synaptic device can transmit preneuron signals and change its weight at the same time, we can constitute the compact neuromorphic system without additional switches or logic operation and emulate the operation of neuron with a minimum number of devices and power dissipation (~3 pJ).

Compact Neuromorphic System With Four-Terminal Si-Based Synaptic Devices for Spiking Neural Networks

In this paper, a synaptic transistor based on the indium zinc oxide (IZO)–hafnium oxide (HfO2) thin film structure was demonstrated. Blue light pulses (470 nm) were used as the presynaptic stimulus, the IZO channel was used as the postsynaptic membrane, and the HfO2 electrolyte film was regarded as the synaptic cleft. The synaptic transistor exhibited the behavior of paired-pulse facilitation. With different light power densities, the channel current of the transistor can be regulated to different levels, corresponding to different synaptic weights. In addition, the transistor showed the brain’s memory behaviors including the short-term memory and the transition from the short to the long term memory. The synaptic behaviors of the transistor can be explained by the trapping and releasing processes of the photo-generated carriers.

/pdf/a-hybrid-phototransistor-neuromorphic-synapse-504192t5us.pdf

A Hybrid Phototransistor Neuromorphic Synapse

In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrateand- Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.

Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing- Dependent Plasticity

We propose a simple and compact thyristor-based neuron circuit. The thyristor exhibits bi-stable characteristics that can mimic the action potential of the biological neuron, when it is switched between its OFF-state and ON-state with the help of assist circuit. In addition, a method of inter-neuron connection with synaptic devices is proposed, using double current mirror circuit. The circuit utilizes both short-term and long-term plasticity of the synaptic devices by flowing current through them and transferring it to the post-synaptic neuron. The double current mirror circuit is capable of shielding the pre-synaptic neuron from the post synapticneuron while transferring the signal through it, maintaining the synaptic conductance unaffected by the change in the input voltage of the post-synaptic neuron.

Neuron Circuit Using a Thyristor and Inter-neuron Connection with Synaptic Devices

We have developed the neuromorphic system that can work with the four-terminal Si-based synaptic devices and verified the operation of the system using simulation tool and printed-circuit-board (PCB). The symmetrical current mirrors connected to the n-channel and p-channel synaptic devices constitut...

Implementation of Neuromorphic System with Si-based Floating-body Synaptic Transistors

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Silicon-based Floating-body Synaptic Transistor

Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultra-Low Power Logic Circuits

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Silicon-based Floating-body Synaptic Transistor

Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultra-Low Power Logic Circuits