Highly manufacturable sub-100-nm 1.2-V mobile dynamic random access memory (DRAM) having full functionality and excellent reliability have been successfully developed. A unique and simple DRAM technology with dual-gate CMOSFET was realized using plasma-nitrided thin gate oxide and p/sup +/ poly gate formed by BF/sub 2/ ion implanted compensation of in situ phosphorus (n/sup +/) doped amorphous silicon gate. Using this technology, boron penetration into the channel, gate poly depletion, and dopant interdiffusion between n/sup +/- and p/sup +/-doped WSi/sub x/-polycide gates were successfully suppressed. In addition, a negatively biased word line scheme and a storage capacitor with laminated high-/spl kappa/ Al/sub 2/O/sub 3/ and HfO/sub 2/ dielectrics were also developed to achieve mobile DRAM operating at 1.2 V with excellent performance and reliability.

A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n/sup +/-doped polysilicon

Nitrogen in the gate oxide of a 3.3-V, 0.4-/spl mu/m CMOS technology was modulated in a variety of ways, including treatments with N/sub 2/O, NO, oxidation at elevated pressure, and post-oxidation annealing. A direct correlation was observed between the fixed positive charge and the hot-electron immunity, regardless of the means by which the nitrogen was incorporated, or subsequently annealed. The implication is that one benefit and one drawback of nitrided-oxide gate oxides are inextricably linked, with significant effects on the transistor design.

Correlation between fixed positive charge and hot-electron immunity for nitridized oxides

Physicochemical characterizations of polysilicon thin multilayer films have been studied after annealing. In-situ heavily boron-doped polysilicon (poly/Si) and nitrogen-doped silicon (NIDOS) films were deposited by low-pressure chemical vapor deposition (LPCVD) onto an oxidized monocrystalline silicon substrate. Secondary ion mass spectrometry (SIMS) profiles showed a boron diffusion reduction in the NIDOS layer. In addition, Fourier transform infrared spectroscopy (FTIR) analysis clearly showed an evolution of the absorption picks related to the nitrogen atom in the complex form leading to boron atom activation in the films. Therefore, this multilayer structure can be largely used for metal-oxide-semiconductor (MOS) devices.

Physicochemical Characterization of Annealed PolySi/NIDOS/SiO2 Structures

In this paper, the influence of nitrous oxide (N2O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N2O nitridation temperatures ( $T_{N}$ ) from 700 °C to 800 °C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current ( ${\text{I}}_{\text{ON}}$ ), and enhancement of TEOS gate oxide breakdown ${E}$ -field ( ${E} _{\text {OBD}}$ ). PG JAM TFTs by means of a proper channel doping concentration ( $N_{\text {ch}}= {5} \times {10}^{18}$ cm $^{-3}$ ) and a suitable $T_{N}$ (800 °C) exhibit a steep A.S.S. ~96 mV/dec. and a large ${E} _{\text {OBD}} {\sim }12.1$ MV/cm.

/pdf/investigation-of-nitrous-oxide-nitridation-temperatures-on-p-3k121652ne.pdf

Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

Combination Effects Of Nitrogen Implantation At S/D Extension And N/sub2/0 Oxide On 0.18/spl mu/m n- and p- And P-MOSFETs

Absfruct-In this paper, we demonstrate the superior diffusion barrier properties of NO-nitrided SiOn in suppressing boron penetration for p+-polysilicon gated MOS devices. Boron penetration effects have been studied in terms of flatband voltage shift, decrease in inversion capacitance (due to polysilicon depletion effect), impact on interface state density, and chargeto-breakdown. Results show that NO-nitrided SiOz, as compared to conventional thermal SiOz, exhibit much higher resistance to boron penetration, and therefore, are very attractive for surface channel PMOS technology.

Highly Suppressed Boron Penetration in NO-Nitrided Si02 for Gated MOS Device

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

M. Bhat

Author Tools

Chat about Author

Papers

Highly Suppressed Boron Penetration in NO-Nitrided Si02 for Gated MOS Device