Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects (vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

Point defects and dopant diffusion in silicon

Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a second stage of intimately contacting the planar face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer (1) and said stiffener (7) at a temperature above that at which the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the said microbubbles, a separation between the thin film (5 ) and the mass of the substrate (6).

Process for the production of thin semiconductor material films

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

The applications of exchange coupled bi-magnetic hard/soft and soft/hard ferromagnetic core/shell nanoparticles are reviewed. After a brief description of the main synthesis approaches and the core/shell structural-morphological characterization, the basic static and dynamic magnetic properties are presented. Five different types of perspective applications, based on diverse patents and research articles, are described: permanent magnets, recording media, microwave absorption, biomedical applications and other applications. Both the advantages of the core/shell morphology and some of the remaining challenges are discussed.

/pdf/applications-of-exchange-coupled-bi-magnetic-hard-soft-and-4l2vhry970.pdf

Applications of exchange coupled bi-magnetic hard/soft and soft/hard magnetic core/shell nanoparticles

https://digital.csic.es/bitstream/10261/131598/1/exchangecoupled.pdf

This work is devoted to the characterization of the Si:H system obtained by high-fluence, low-energy, hydrogen implantation into single-crystal silicon. The implanted hydrogen profile and the ones resulting after thermal annealing in the range 100--800 \ifmmode^\circ\else\textdegree\fi{}C are detected by secondary-ion mass spectrometry and elastic-recoil detection analysis. The displacement field in the crystal, measured by channeling Rutherford-backscattering spectrometry, is found to depend on the direct radiation damage, the extended defects formed after ion implantation (revealed by transmission electron microscopy), and the implanted species. The contribution to the displacement field due to hydrogen-related defects has a characteristic ``reverse annealing'' in the range 100--400 \ifmmode^\circ\else\textdegree\fi{}C, essentially due to their formation kinetics.

Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon

The electrical activity of grain boundaries (GB’s) in polycrystalline silicon is strongly affected by heat treatments, which are known to induce the segregation of oxygen. The large, quantitative variations of the electrical activity of GB’s observed experimentally, which are a function not only of the heat treatments but also of the carbon and oxygen content of the specific sample examined, could not be explained however, without assuming that carbon and oxygen play a synergistic role. We demonstrate in this work, by using secondary ion mass spectrometry, that oxygen and carbon segregate simultaneously, albeit spatially resolved, at grain boundaries. This result appears to be of major importance when interpreting electron or light beam induced current profiles at grain boundaries in polycrystalline silicon.

Grain boundary segregation of oxygen and carbon in polycrystalline silicon

A dependence of boron anomalous diffusion on defect depth position has been observed after furnace and electron beam annealing of samples damaged with 28Si ions implanted at different energies. This behavior was correlated with the vacancy and interstitial excesses, produced under bombardment in the surface region and in depth, respectively. The spatial separation of these point defects was evidenced by the analysis of the intensity profiles obtained by double‐crystal x‐ray diffraction.

Influence of implant induced vacancies and interstitials on boron diffusion in silicon

Hydrogen implantation into silicon at room temperature and at 77 K has been studied by secondary-ion mass spectrometry (SIMS), elastic recoil diffusion analysis (ERDA), Rutherford backscattering spectroscopy (RBS), multiple-crystal x-ray diffraction (XRD), conventional and high-resolution transmission electron microscopy (TEM and HREM), and binary-collision simulation (marlowe). The implantation energy was 15.5 keV, low enough not to form dense collisional cascades; the fluence range was ${10}^{14}$ to 2\ifmmode\times\else\texttimes\fi{}${10}^{16}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$. Annealing experiments were carried out by heating the implanted samples for 2 h in the temperature interval 400--800 \ifmmode^\circ\else\textdegree\fi{}C. While the hydrogen profile is well described by marlowe simulation, the resulting crystal deformation, measured by RBS, XRD, TEM, and HREM, cannot be interpreted in terms of damage imparted to the silicon target, but is mainly related to the displacement field around hydrogen. An accurate analysis is, however, able to separate the contributions due to self-interstitials from that due to hydrogen. The threshold energy for Frenkel-pair production is determined and is found to be 43\ifmmode\pm\else\textpm\fi{}5 eV, remarkably higher than the commonly accepted value of 15 eV.

Structure and evolution of the displacement field in hydrogen-implanted silicon

Phosphorus was implanted at doses below amorphization threshold in virgin silicon and in silicon containing interstitial dislocation loops. The loops were formed by high‐dose Si+ implantation and 900 °C, 30 min annealing. Triple‐crystal x‐ray diffraction and junction depth measurements combined with secondary ion mass spectrometry were used for the analysis of implant defects and the determination of P distribution, respectively. Annealings were carried out in furnace in the range between 600 and 900 °C, and by electron beam at 1000 °C for 10 s. The results obtained show that the presence of loops strongly reduces the phosphorus anomalous diffusion. This phenomenon is the consequence of the absorption by the loops of the interstitial excess coming from dissolution of the clusters produced by the P implant. The influence of the loop position with respect to the P distribution on the extent of P diffusivity is analyzed and discussed.

Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorus implanted in silicon

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