Lukas Kranz
23 Papers
65 Citations
Lukas Kranz is an academic researcher. The author has contributed to research in topics: Diode & MOSFET. The author has an hindex of 6, co-authored 23 publications.
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Papers
The current status and future prospects of SiC high voltage technology
A. Mihaila,Lars Knoll,Enea Bianda,Marco Bellini,Stephan Wirths,G. Alfieri,Lukas Kranz,F. Canales,Munaf Rahimo +8 more
- 01 Dec 2018
TL;DR: In this paper, the static and dynamic performance of 3.3 and 6.5kV-rated SiC MOSFETs was evaluated and benchmarked against similarly rated state-of-the-art Si IGBTs.
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About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
TL;DR: In this article, the electrical activation of 1×1020 cm-3 implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature.
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Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs
Lars Knoll,A. Mihaila,Lukas Kranz,Marco Bellini,S. Wirths,Enea Bianda,Charalampos Papadopoulos,Munaf Rahimo +7 more
- 13 May 2018
TL;DR: In this article, the static and dynamic performance, short circuit capability and safe operation area (SOA) of 6.5kV SiC MOSFETs were investigated for the static performance and the dynamic performance.
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Planar 1.2kV SiC MOSFETs with retrograde channel profile for enhanced ruggedness
Lars Knoll,A. Mihaila,S. Wirths,Yulieth Arango,Alyssa Prasmusinto,Enea Bianda,Lukas Kranz,Marco Bellini,G. Romano,Charalampos Papadopoulos +9 more
- 19 May 2019
TL;DR: The static and dynamic performance of Silicon Carbide (SiC) MOSFET rated for 1200V applications has been investigated in this paper, where a novel retrograde doping profile has been employed.
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Phosphorus-Related Complexes and Shallow Doping in Diamond
Abstract: We present a theoretical study of phosphorus‐related complexes in diamond. Presently, phosphorus is the most shallow donor known in diamond, located at 0.56 eV below the conduction band edge. The study examines the possibility of co‐doping P with species of lower or higher electronegativity, in order to obtain a more shallow donor. The effects of electronegativity of the co‐dopant, on the energy position in the band gap of the studied complexes, are analyzed in the light of density functional theory calculations and of group theoretical analysis.
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