Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be determined. To achieve this, multiple challenges must be overcome, including reducing the contact resistance, developing stable and controllable doping schemes, advancing mobility engineering and improving high-κ dielectric integration. The large-area growth of uniform 2D layers is also required to ensure low defect density, low device-to-device variation and clean interfaces. Here we review the development of 2D field-effect transistors for use in future VLSI technologies. We consider the key performance indicators for aggressively scaled 2D transistors and discuss how these should be extracted and reported. We also highlight potential applications of 2D transistors in conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage and future interconnect technologies. This Review examines the development of field-effect transistors based on two-dimensional materials and considers the challenges that need to be addressed for the devices to be incorporated into very large-scale integration (VLSI) technology.

Transistors based on two-dimensional materials for future integrated circuits

Bioinspired in-sensor visual adaptation for accurate perception

Electrospun nanofibers have received considerable attention in the field of soft electronics owing to their promising advantages and superior properties in flexibility and/or stretchability, conductivity, and transparency; furthermore, their one-dimensional nanostructure, high surface area, and diverse fibrous morphologies are also desirable. Herein, we provide an overview of electrospun nanofiber-based soft electronics. A brief introduction of the unique structure and properties of electrospun nanofiber materials is provided, and assembly strategies for flexible/stretchable electronics are highlighted. We then summarize the latest progress in the design and fabrication of representative flexible/stretchable electronic devices utilizing electrospun nanofibers, such as flexible/stretchable conductors, sensors, energy harvesting and storage devices, and transistors. Finally, a conclusion and several future research directions for electrospun nanofiber-based soft electronics are proposed. The development of low-cost, efficient, and large-scale methods for fabricating ‘soft’ electronics, conducting materials with improved flexibility and stretchability, increases the range of possible applications. Flexible electronics are useful for foldable displays, healthcare monitoring, artificial skins and implantable bioelectronics. One approach to fabricating these devices is to construct them from conductive nanofibers. Takao Someya from the University of Tokyo and colleagues review recent advances in constructing nanofiber-based soft electronics using a technique called electrospinning. Electrospinning works by drawing a molten material through a nozzle into an electric field to produce strands much finer than a human hair. The authors review the structure and properties of electrospun nanofiber materials and the various strategies for assembling flexible and stretchable electronic devices such as sensors, transistors, and components for energy harvesting and storage. This review introduce the structure and properties of electrospun nanofiber materials and the various strategies for assembling soft electronic devices such as sensors, transistors, and components for energy harvesting and storage.

/pdf/electrospun-nanofiber-based-soft-electronics-36cchba6ma.pdf

Electrospun nanofiber-based soft electronics

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm2 V−1s −1, 210 μA μm−1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 107 cd m−2 luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing. Low-temperature ultraclean integration of large-area MoS2 thin-film transistors with nitride micro-LEDs through a back end of line process enables the demonstration of displays with high resolution and uniformity.

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

Virtual reality (VR) and augmented reality (AR) are overcoming the physical limits of real‐life using advances in devices and software. In particular, the recent restrictions in transportation from the coronavirus disease 2019 (COVID‐19) pandemic are making people more interested in these virtual experiences. However, to minimize the differences between artificial and natural perception, more human‐interactive and human‐like devices are necessary. The skin is the largest organ of the human body and interacts with the environment as the site of interfacing and sensing. Recent progress in skin electronics has enabled the use of the skin as the mounting object of functional devices and the signal pathway bridging humans and computers, with opening its potential in future VR and AR applications. In this review, the current skin electronics are summarized as one of the most promising device solutions for future VR/AR devices, especially focusing on the recent materials and structures. After defining and explaining VR/AR systems and the components, the advantages of skin electronics for VR/AR applications are emphasized. Next, the detailed functionalities of skin electronic devices, including the input, output, energy devices, and integrated systems, are reviewed for future VR/AR applications. [ABSTRACT FROM AUTHOR] Copyright of Advanced Functional Materials is the property of John Wiley & Sons, Inc. and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Skin Electronics: Next-Generation Device Platform for Virtual and Augmented Reality

Wafer-scale monolithic integration of full-colour micro-LED display using MoS2 transistor

Electronic applications are continuously developing and taking new forms. Foldable, rollable, and wearable displays are applicable for human health care monitoring or robotics, and their operation relies on organic light-emitting diodes (OLEDs). Yet, the development of semiconducting materials with high mechanical flexibility has remained a challenge and restricted their use in unusual format electronics. This study presents a wearable full-color OLED display using a two-dimensional (2D) material-based backplane transistor. The 18-by-18 thin-film transistor array was fabricated on a thin MoS2 film that was transferred to Al2O3 (30 nm)/polyethylene terephthalate (6 μm). Red, green, and blue OLED pixels were deposited on the device surface. This 2D material offered excellent mechanical and electrical properties and proved to be capable of driving circuits for the control of OLED pixels. The ultrathin device substrate allowed for integration of the display on an unusual substrate, namely, a human hand.

https://advances.sciencemag.org/content/advances/6/28/eabb5898.full.pdf

Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS2 backplane.

Stretchable alternating-current electroluminescent (ACEL) devices are required due to their potential in wearable, biomedical, e-skin, robotic, lighting, and display applications; however, one of the main hurdles is to achieve uniform electroluminescence with an optimal combination of transparency, conductivity, and stretchability in electrodes. We therefore propose a fabrication scheme involving strategically combining two-dimensional graphene layers with a silver nanowire (Ag NW)-embedded PEDOT:PSS film. The developed hybrid electrode overcomes the limitations of commonly known metallic NWs and ionic conductor-based electrodes for ACEL applications. Furthermore, the potential of the hybrid electrode is realized in demonstrating large-area stretchable ACEL devices composed of an 8 × 8 passive array. The prototype ACEL passive array demonstrates efficient and uniform electroluminescence under high levels of mechanical deformation such as bending, rolling, twisting, and stretching.

Stretchable Electroluminescent Display Enabled by Graphene-Based Hybrid Electrode.

Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics.

Abstract A flexible full-color micro-LED display with high mechanical robustness was fabricated by printing quantum dots (QDs) on a blue micro-LED array using standard photolithography. The red and green colors yielded from QDs exhibit a better color gamut than conventional color filters. The light conversion efficiency was enhanced by adding TiO 2 nanoparticles to the QD-photoresist composite. This full-color micro-LED display was successfully mounted on various unusual substrates such as curved glass, fabrics, and human skin, enabling diverse optoelectronic applications. In addition, wireless multi-channel visible light communication (VLC) based on the wavelength-division-multiplexing orthogonal-frequency-division-multiplexing (WDM-OFDM) technique was demonstrated using a QD-based color micro-LED panel. A high data transmission rate of 1.9 Gbps was successfully obtained owing to the high electrical–optical modulation bandwidth of the QD-based micro-LED panel. 

https://www.nature.com/articles/s41528-022-00234-z.pdf

Flexible micro-LED display and its application in Gbps multi-channel visible light communication

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