This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the source/drain metal, and they are distributed within approximately 25 nm of the back surface. Furthermore, the existence and distribution depth of the high density of Vo defects are verified by means of XPS spectra analyses. Then, the mechanism through which the above Vo defects lead to the instability of BCE a-IGZO TFTs is elucidated. Lastly, it is demonstrated that the device instability under high-humidity conditions and negative bias temperature illumination stress can be effectively alleviated by etching and thus removing the surface layer of the back channel, which contains the high density of Vo defects. In addition, this etch method does not cause a significant deterioration in the uniformity of electrical characteristics and is quite convenient to implement in practical fabrication processes. Thus, a novel and effective solution to the device instability of BCE a-IGZO TFTs is provided.

Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors

Optimizing the Performance of the Atomic-Layer-Deposited Zinc–Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

Anomalous Carrier Enhancement with Lightly Mn Doping in Indium–Tin Oxide Thin Films Studied by Hard X-ray Photoemission Spectroscopy

In this article, this research demonstrates the influence of in-situ introduction of H2 into the working gas on the physical properties of post-annealed In2O3 thin films and the performance of associated devices. A gradual increase in the H2 ratio leads to improved film quality, as indicated by spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscope analyses showing a reduction in defect states such as band-tail states and VO in the film, and a smoother surface morphology with the root mean square roughness approximately 0.446 nm. Furthermore, this hydrogen doping effect results in a distinct shift in the device’s threshold voltage toward the positive direction, and an improvement in the field-effect mobility and subthreshold swing. Consequently, a high-performance In2O3:H TFT is developed, exhibiting a field-effect mobility of 47.8 cm2/Vs, threshold voltage of −4.1 V and subthreshold swing of 0.25 V/dec. These findings highlight the potential of in-situ H doping as a promising approach to regulate In2O3-based TFTs.

Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

In this work, the etch-stopper layer (ESL) structured InZnGeO thin-film transistors (TFTs) were prepared. Here, doping Ge has a high Hall mobility and helps to achieve high mobility, which compares to the mobility of InGaZnO TFT. We investigated the influence of SiO2 ESL deposition temperature on the performance of InZnGeO TFTs. As the ESL deposition temperature increased, the mobility of InZnGeO TFT went up from 23.6 to 41.3 cm2 V-1 s-1 and the current ratio (<inline-formula> <tex-math notation="LaTeX">${I}_{\text {on}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text {off}}$ </tex-math></inline-formula>) increased from <inline-formula> <tex-math notation="LaTeX">$1.2\times 10^{{7}}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$4.3\times 10^{{8}}$ </tex-math></inline-formula>. X-ray photoelectron spectroscopy showed that low-temperature deposited ESL has a large amount of hydrogen bonding. The impact of ESL deposition temperature on the distribution of subgap states in InZnGeO thin films is qualitatively analyzed by the Silvaco Atlas 2-D simulator, which reveals that shallow-level subgap defect states can be suppressed by decreasing oxygen-related defects. The results confirmed that Ge doping may be a prospective method for improving the mobility of TFTs with ESL deposited at a high temperature.

High-Mobility Thin-Film Transistors Based on InZnGeO Channel Layer

In this work, the source/drain (S/D) electrode process is considered to have a great impact on the mobility (μFE)–threshold (Vth) trade-off for high-mobility amorphous oxide semiconductor (AOS) thin-film transistors. High-mobility AOS materials have worse oxygen-fixation ability compared to InGaZnO. In this work, we show that this is the case for the Mo S/D electrode process on InSnZnO channels and has a great impact on the mobility-threshold trade-off. Oxygen vacancy gradients are observed in the depth profile X-ray photoelectron spectroscopy analysis on InSnZnO after Mo S/D deposition and show a bigger change in oxygen vacancies (VO) between the surface and inner layers and thicker compared to InGaZnO. This leads to an obvious negative shift in Vth or even no switching characteristic. Postprocessing such as oxygen-plasma treatment can make Vth positive but degrade the μFE. In situ replenishing oxygen via adopting ITO S/D electrodes deposited in an oxygen-containing atmosphere facilitates the achievement of excellent overall electrical characteristics, with μFE up to 87.1 cm2/Vs, Vth ∼ −0.64 V, and Ion/Ioff ∼ 2.3 × 108. 

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Lu Yang

Author Tools

Chat about Author

Papers

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors