Embodiments of durable, anti-reflective articles are described. In one or more embodiments, the article includes a substrate and an anti-reflective coating disposed on the major surface. The article exhibits an average light transmittance of about 94% or greater over an optical wavelength regime and/or an average light reflectance of about 2% or less over the optical wavelength regime, as measured from an anti-reflective surface. In some embodiments, the article exhibits a maximum hardness of about 8 GPa or greater as measured by a Berkovich Indenter Hardness Test along an indentation depth of about 50 nm or greater and a b* value, in reflectance, in the range from about -5 to about 1 as measured on the anti- reflective surface only at all incidence illumination angles in the range from about 0 degrees to about 60 degrees under an International Commission on Illumination illuminant.

Durable anti-reflective articles

Embodiments of this disclosure pertain to a coating material comprising silicon and/or aluminum, hydrogen and any two or more of oxygen, nitrogen, carbon, and fluorine. The coating material exhibits a hardness of about 17 GPa or greater and an optical band gap of about 3.5 eV or greater. In some embodiments, the coating material includes, in atomic%, silicon and/or aluminum in an amount of about 40 or greater, hydrogen in an amount in the range from about 1 to about 25, nitrogen in an amount of about 30 or greater, oxygen in an amount in the range from about 0 to about 7.5, and carbon in an amount in the range from about 0 to about 10. The coating material may optionally include fluorine and/or boron. Articles including the coating material are also described and exhibit an average transmittance of about 85% or greater over an optical wavelength regime in the range from about 380 nm to about 720 nm and colorlessness.

Scratch-resistant materials and articles including the same

The invention discloses a quantum dot single photon source and its preparation method, relating to the field of single photon sources. The method includes growing a buffer layer on a substrate, alternately growing at least 4 pairs of GaAs and Al0.95Ga0.05As on the buffer layer to obtain a DBR mirror layer, growing n-doped GaAs on the DBR mirror layer as a back gate; prefabricating an imprint template which is provided with a plurality of convex structures matched with single quantum dots, imprinting a nano-imprint template structure on the back gate, and etching the quantum dot growth stress concentration region corresponding to the convex structures; and growing the quantum dots in the region to obtain an active layer, growing a front gate on the active layer, alternately growing at least 4 pairs of GaAs and Al0.95Ga0.05As on the front gate to obtain an upper surface DBR layer, and marking and etching the light source sample to obtain a quantum dot single photon source. The quantum dot single photon source and its preparation method can quickly and accurately locate the positions of the quantum dots, and is convenient for industrial production.

Quantum dot single photon source and its preparation method

The invention belongs to the field of optical thin films and particularly relates to a wide band cut-off ultra-narrow-band filter Through designing a wide band cut-off filtering film formed by a multilayer reflection film system at one side of a base and designing an all-dielectric two-cavity ultra-narrow-band filtering film formed by a multilayer reflection film system at the other side of the base, the wide band cut-off filtering film with the bandwidth of 1nm is realized finally

Wide band cut-off ultra-narrow-band filter

The invention discloses a production method of a high visible light transmittance vanadium dioxide film. The method comprises the following steps: 1, producing a metallic vanadium film on a substrate; 2, carrying out oxygen introduction annealing on the produced metallic vanadium film under a vacuum condition under an annealing gas pressure of 10-80Pa at an annealing temperature of 400-550DEG C for 60-90min to obtain a vanadium dioxide film with a phase transition effect; and 3, carrying out introduction annealing on the vanadium dioxide film with a phase transition effect under a vacuum condition under an annealing gas pressure of 100-2000Pa at an annealing temperature of 400-550DEG C for 20-40min to peroxidate the surface of the vanadium dioxide film in order to generate vanadic anhydride. The vanadic anhydride film has a visible light transmittance increasing effect, can be closely combined with the vanadium dioxide film, and difficultly sheds. The vanadium dioxide film produced through the method has the advantages of high visible light transmittance, obvious phase transition effect and adjustable phase transition temperature, can adapt to different demands, and can be applied to the field of intelligent windows.

Production method of high visible light transmittance vanadium dioxide-based film

The invention discloses a method for preparing a vanadium dioxide film. According to the method, metal vanadium or low-valence vanadium oxide film is annealed in oxygen and vacuum to obtain a phase-transition vanadium dioxide film; the most proper oxygen partial pressure, the annealing temperature and the annealing time are selected according to the type and thickness of the low-valence vanadium oxide to obtain a vanadium dioxide film with excellent performance, wherein the infrared regulation rate at 2,400nm can be 58 percent, and the visible light transmittance can be 43 percent; the doped low-valence vanadium oxide film is oxidized to obtain the doped vanadium dioxide film, and the phase transition temperature of the vanadium dioxide can be regulated by means of doping to adapt to different requirements. The vanadium dioxide film can be applied to optical information storage, photoelectric switches, intelligent windows and uncooled infrared focal plane imaging; the method is compatible with large-scale coated glass production process, and a vanadium dioxide film with excellent performance can grow on amorphous glass.

Method for preparing vanadium dioxide film

The invention discloses a blue light filter film for visible light communication, which is structurally characterized in that a wide-pass band interference cutoff filter film, a high reflection film and an antireflection film are arranged on a substrate sequentially The blue light filter film can greatly reduce noises formed due to a reason that visible illuminating light and background radiation enter a detector Moreover, since the edge of the blue light filter film for blue light signal penetration and visible illuminating light cutoff is steep and accurate, when the visible illuminating light and near-infrared interference are filtered to an utmost extent, the loss of the blue light signals is minimum, the efficiency and the signal-to-noise ratio of the visible light communication are remarkably improved, and the blue light filter film is very beneficial to the development and the application of fields such as the visible light communication

Blue light filter film for visible light communication

The invention discloses a near-infrared filter for optical communication. A substrate of the filter is made of transparent or colored glass such as optical glass and jewel. The two sides of the substrate are respectively plated with a band-pass filter film and an antireflective film. Therefore, 760-900nm light can be transmitted efficiently, and 400-760nm and 900-1100nm light can be cut off. Signal light within near-infrared bands is transmitted efficiently, and stray light in other bands (visible light especially) is cut off, thus obtaining high signal-to-noise ratio. The spectral curve of the filter film system has high pass-band transmittance, approximately rectangular pass-band shape, small pass-band ripple, high out-of-band cut-off depth and wide cut-off range. The location requirement of the film system is reduced, and the rate of finished products is improved. By adopting the near-infrared filter for optical communication prepared by the use of the film system structure and the preparation method, the influence of stray light in other bands can be effectively suppressed while as much signal light as possible can be acquired, and the signal-to-noise ratio is significantly improved.

Near-infrared filter for optical communication

The invention discloses a quantum dot embedded integrated micro-cavity monochromatic light source array which comprises a substrate, a high quality factor optical micro-cavity array firmly combined with the substrate, quantum dots embedded in the optical micro-cavity array, an excitation light source and a long-wave-pass or band-pass optical filter arranged on the back side of the substrate and firmly combined with the substrate. According to the monochromatic light source array, frequency selection is carried out on light emitting of the quantum dots through a series of resonance cavities of different cavity lengths, and accordingly arrays of different wavelengths corresponding to monochromatic light in different space positions are formed and are small, the size and the shape of each wavelength light source unit can be designed at will, and monochromaticity is good. When a medium optical micro-cavity is adopted, material selection can not be limited by quantum dot lattice matching, quality factors can be very high and can even form single-photo sources or laser arrays of different wavelengths, and the quantum dot embedded integrated micro-cavity monochromatic light source array has important application value in the fields of quantum communication, micro spectrographs and the like.

Quantum dot embedded integrated micro-cavity monochromatic light source array

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Papers

Method for preparing vanadium dioxide film

Blue light filter film for visible light communication

Near-infrared filter for optical communication

Quantum dot embedded integrated micro-cavity monochromatic light source array